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Pyramidal GaAs/ Al
z
Ga
1-z
As quantum wire/dot systems with controlled heterostructure potential
Q. Zhu
, J. D. Ganière
, Z. B. He
, K. F. Karlsson
, M. Byszewski
,
E. Pelucchi
, A. Rudra
, E. Kapon
Swiss Federal Institute of Technology Lausanne
University of Warsaw
Ecole Polytechnique
Linköping University
Research output
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peer-review
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z
Ga
1-z
As quantum wire/dot systems with controlled heterostructure potential'. Together they form a unique fingerprint.
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Material Science
Nanostructure
100%
Heterojunction
100%
Gallium Arsenide
100%
Photoluminescence
66%
Aluminium Gallium Arsenide
66%
Correlation Spectroscopy
66%
Optical Property
33%
Electron Microscopy
33%
Cathodoluminescence
33%
Chemical Vapor Deposition
33%
GaAs/AlGaAs
33%
Theoretical Modeling
33%
Chemistry
Nanomaterial
100%
Gaas
100%
Heterojunctions
100%
Photon Correlation Spectroscopy
66%
Photoluminescence Spectrum
33%
Photoluminescence
33%
Metallocene
33%
Optical Property
33%
Electron Microscopy
33%
Chemical Vapor Deposition
33%
Cathodoluminescence
33%
Physics
Heterojunctions
100%
Nanomaterial
100%
Quantum Wire
100%
Photoluminescence
66%
Optical Property
33%
Quantum Dot
33%
Electron Microscopy
33%
Cathodoluminescence
33%
Vapor Deposition
33%
Quantum Structure
33%