Abstract
We report on the optical properties of site-controlled InGaAs dots in GaAs barriers grown in pre-patterned, large pitch, pyramidal recesses by metalorganic vapour phase epitaxy. The inhomogeneous broadening of excitonic emission from an ensemble of quantum dots is found to be extremely narrow, with a standard deviation of 1.19 meV. A dramatic improvement in the spectral purity of emission lines from individual dots is also reported (18-30 μeV ) when compared to the state-of-the-art for site controlled quantum dots.
| Original language | English |
|---|---|
| Pages (from-to) | 78-82 |
| Number of pages | 5 |
| Journal | Superlattices and Microstructures |
| Volume | 47 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - Jan 2010 |
Keywords
- InGaAs dot
- MOVPE
- Site-controlled quantum dots
- Small inhomogeneous broadening
- Spectral purity