Quantum Well Intermixing in 2 μm InGaAs Multiple Quantum Well structures

J. Baig; B. Roycroft; J. O'Callaghan; C. Robert; N. Ye; M. Gleeson; A. Gocalinska; E. Pelucchi; P. Townsend; B. Corbett

Quantum Well Intermixing in 2 μm InGaAs Multiple Quantum Well structures

J. Baig
, B. Roycroft
, J. O'Callaghan
, C. Robert
, N. Ye
, M. Gleeson
, A. Gocalinska
, E. Pelucchi
, P. Townsend
, B. Corbett

University College Cork

Research output: Contribution to journal › Article › peer-review

Abstract

Quantum well intermixing in 2μm emitting structures is presented for the first time. A photoluminescence and electroluminescence differential shift of 160nm is achieved between SiNx and SiO₂ capped regions demonstrating potential for monolithic integration.

Original language	English
Article number	SM4R.4
Journal	Optics InfoBase Conference Papers
Publication status	Published - 2016
Event	CLEO: Science and Innovations, SI 2016 - San Jose, United States Duration: 5 Jun 2016 → 10 Jun 2016

Cite this

@article{e049c07f3d344be0a96f900a5cd16fd3,

title = "Quantum Well Intermixing in 2 μm InGaAs Multiple Quantum Well structures",

abstract = "Quantum well intermixing in 2μm emitting structures is presented for the first time. A photoluminescence and electroluminescence differential shift of 160nm is achieved between SiNx and SiO2 capped regions demonstrating potential for monolithic integration.",

author = "J. Baig and B. Roycroft and J. O'Callaghan and C. Robert and N. Ye and M. Gleeson and A. Gocalinska and E. Pelucchi and P. Townsend and B. Corbett",

note = "Publisher Copyright: {\textcopyright} OSA 2016.; CLEO: Science and Innovations, SI 2016 ; Conference date: 05-06-2016 Through 10-06-2016",

year = "2016",

language = "English",

journal = "Optics InfoBase Conference Papers",

issn = "2162-2701",

}

TY - JOUR

T1 - Quantum Well Intermixing in 2 μm InGaAs Multiple Quantum Well structures

AU - Baig, J.

AU - Roycroft, B.

AU - O'Callaghan, J.

AU - Robert, C.

AU - Ye, N.

AU - Gleeson, M.

AU - Gocalinska, A.

AU - Pelucchi, E.

AU - Townsend, P.

AU - Corbett, B.

PY - 2016

Y1 - 2016

N2 - Quantum well intermixing in 2μm emitting structures is presented for the first time. A photoluminescence and electroluminescence differential shift of 160nm is achieved between SiNx and SiO2 capped regions demonstrating potential for monolithic integration.

AB - Quantum well intermixing in 2μm emitting structures is presented for the first time. A photoluminescence and electroluminescence differential shift of 160nm is achieved between SiNx and SiO2 capped regions demonstrating potential for monolithic integration.

UR - https://www.scopus.com/pages/publications/85136583934

M3 - Article

AN - SCOPUS:85136583934

SN - 2162-2701

JO - Optics InfoBase Conference Papers

JF - Optics InfoBase Conference Papers

M1 - SM4R.4

T2 - CLEO: Science and Innovations, SI 2016

Y2 - 5 June 2016 through 10 June 2016

ER -

Quantum Well Intermixing in 2 μm InGaAs Multiple Quantum Well structures

Abstract

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