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Quantum well intermixing in 2 μm InGaAs multiple quantum well structures

Research output: Chapter in Book/Report/Conference proceedingsConference proceedingpeer-review

Abstract

Quantum well intermixing in 2μm emitting structures is presented for the first time. A photoluminescence and electroluminescence differential shift of 160nm is achieved between SiNx and SiO2 capped regions demonstrating potential for monolithic integration.

Original languageEnglish
Title of host publication2016 Conference on Lasers and Electro-Optics, CLEO 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781943580118
DOIs
Publication statusPublished - 16 Dec 2016
Event2016 Conference on Lasers and Electro-Optics, CLEO 2016 - San Jose, United States
Duration: 5 Jun 201610 Jun 2016

Publication series

Name2016 Conference on Lasers and Electro-Optics, CLEO 2016

Conference

Conference2016 Conference on Lasers and Electro-Optics, CLEO 2016
Country/TerritoryUnited States
CitySan Jose
Period5/06/1610/06/16

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