@inbook{ff57fff2eb7e40f98603757b2bd88134,
title = "Quantum well intermixing in AlInGaAs MQW structures through impurity-free vacancy method",
abstract = "We report on quantum well intermixing of AlInGaAs-MQWs using the impurity-free vacancy diffusion method with dielectric capping layers which has potential for realization of photonic integrated circuits. The extent of the bandgap shifts with respect to different dielectric capping layers and alloy temperatures are investigated. The intermixing inhibitor and promoter are then integrated using combination of SiO2 and SiNx dielectric capping layers which shows a differential photoluminescence wavelength more than 110 nm. Based on this developed intermixing technique, we have fabricated AlInGaAs-InP based material stripe lasers emitting at two different wavelength ranges centered at 1519 nm and 1393 nm respectively. Characterizations including the current-voltage and electroluminescence measurements show that the integration of two-bandgaps can be achieved and furthermore a differential wavelength in lasing spectra up to 120 nm is demonstrated.",
keywords = "Bandgap shift, Disordering, Interdiffusion, Photoluminescence, Photonic integrated circuits, Quantum well intermixing, Stripe laser",
author = "Lee, \{Ko Hsin\} and James O'Callaghan and Brendan Roycroft and Daunt, \{Chris L.L.M.\} and Hua Yang and Song, \{Jeong Hwan\} and Peters, \{Frank H.\} and Brian Corbett",
year = "2010",
doi = "10.1117/12.841329",
language = "English",
isbn = "9780819480002",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
booktitle = "Integrated Optics",
note = "Integrated Optics: Devices, Materials, and Technologies XIV ; Conference date: 25-01-2010 Through 27-01-2010",
}