Skip to main navigation Skip to search Skip to main content

Radiation and spontaneous annealing of radiation-sensitive field-effect transistors with gate oxide thicknesses of 400 and 1000 nm

  • Goran S. Ristic
  • , Marko S. Andjelković
  • , Russell Duane
  • , Alberto J. Palma
  • , Aleksandar B. Jakšić
  • University of Nis
  • Innovations for High Performance Microelectronics
  • University of Granada

Research output: Contribution to journal › Article › peer-review

Fingerprint

Dive into the research topics of 'Radiation and spontaneous annealing of radiation-sensitive field-effect transistors with gate oxide thicknesses of 400 and 1000 nm'. Together they form a unique fingerprint.
Sort by

Engineering

Material Science