Radiation Hardness Studies on a Novel CMOS Process for Depleted Monolithic Active Pixel Sensors

Enrico Junior Schioppa; Richard Bates; Craig Buttar; Marco Dalla; Jacobus Willem Van Hoorne; Thanushan Kugathasan; Dzmitry Maneuski; Cesar Augusto Marin Tobon; Luciano Musa; Heinz Pernegger; Petra Riedler; Christian Riegel; Carla Sbarra; Douglas Michael Schaefer; Abhishek Sharma; Walter Snoeys; Carlos Solans Sanchez

doi:10.1109/RADECS.2017.8696182

Radiation Hardness Studies on a Novel CMOS Process for Depleted Monolithic Active Pixel Sensors

Enrico Junior Schioppa
, Richard Bates
, Craig Buttar
, Marco Dalla
, Jacobus Willem Van Hoorne
, Thanushan Kugathasan
, Dzmitry Maneuski
, Cesar Augusto Marin Tobon
, Luciano Musa
, Heinz Pernegger
, Petra Riedler
, Christian Riegel
, Carla Sbarra
, Douglas Michael Schaefer
, Abhishek Sharma
, Walter Snoeys
, Carlos Solans Sanchez

Research output: Chapter in Book/Report/Conference proceedings › Chapter › peer-review

Abstract

Monolithic CMOS sensors are being proposed for the upgrade of the ATLAS inner tracker. Sensors fabricated in a new TowerJazz 180nm process, feature full depletion of the sensitive layer and radiation tolerance up to 10¹⁵n_eq/cm².

Original language	English
Title of host publication	2017 17th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2017
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781538612613
DOIs	https://doi.org/10.1109/RADECS.2017.8696182
Publication status	Published - 2 Jul 2017
Externally published	Yes
Event	17th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2017 - Geneva, Switzerland Duration: 2 Oct 2017 → 6 Oct 2017

Publication series

Name	2017 17th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2017

Conference

Conference	17th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2017
Country/Territory	Switzerland
City	Geneva
Period	2/10/17 → 6/10/17

Access to Document

10.1109/RADECS.2017.8696182

Cite this

Schioppa, E. J., Bates, R., Buttar, C., Dalla, M., Van Hoorne, J. W., Kugathasan, T., Maneuski, D., Tobon, C. A. M., Musa, L., Pernegger, H., Riedler, P., Riegel, C., Sbarra, C., Schaefer, D. M., Sharma, A., Snoeys, W., & Sanchez, C. S. (2017). Radiation Hardness Studies on a Novel CMOS Process for Depleted Monolithic Active Pixel Sensors. In 2017 17th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2017 Article 8696182 (2017 17th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2017). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/RADECS.2017.8696182

Schioppa, Enrico Junior ; Bates, Richard ; Buttar, Craig et al. / Radiation Hardness Studies on a Novel CMOS Process for Depleted Monolithic Active Pixel Sensors. 2017 17th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2017. Institute of Electrical and Electronics Engineers Inc., 2017. (2017 17th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2017).

@inbook{6d9224ff042b4f38a9068a440d0d923f,

title = "Radiation Hardness Studies on a Novel CMOS Process for Depleted Monolithic Active Pixel Sensors",

abstract = "Monolithic CMOS sensors are being proposed for the upgrade of the ATLAS inner tracker. Sensors fabricated in a new TowerJazz 180nm process, feature full depletion of the sensitive layer and radiation tolerance up to 1015neq/cm2.",

author = "Schioppa, \{Enrico Junior\} and Richard Bates and Craig Buttar and Marco Dalla and \{Van Hoorne\}, \{Jacobus Willem\} and Thanushan Kugathasan and Dzmitry Maneuski and Tobon, \{Cesar Augusto Marin\} and Luciano Musa and Heinz Pernegger and Petra Riedler and Christian Riegel and Carla Sbarra and Schaefer, \{Douglas Michael\} and Abhishek Sharma and Walter Snoeys and Sanchez, \{Carlos Solans\}",

note = "Publisher Copyright: {\textcopyright} 2017 IEEE.; 17th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2017 ; Conference date: 02-10-2017 Through 06-10-2017",

year = "2017",

month = jul,

day = "2",

doi = "10.1109/RADECS.2017.8696182",

language = "English",

series = "2017 17th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2017",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2017 17th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2017",

address = "United States",

}

Schioppa, EJ, Bates, R, Buttar, C, Dalla, M, Van Hoorne, JW, Kugathasan, T, Maneuski, D, Tobon, CAM, Musa, L, Pernegger, H, Riedler, P, Riegel, C, Sbarra, C, Schaefer, DM, Sharma, A, Snoeys, W & Sanchez, CS 2017, Radiation Hardness Studies on a Novel CMOS Process for Depleted Monolithic Active Pixel Sensors. in 2017 17th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2017., 8696182, 2017 17th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2017, Institute of Electrical and Electronics Engineers Inc., 17th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2017, Geneva, Switzerland, 2/10/17. https://doi.org/10.1109/RADECS.2017.8696182

Radiation Hardness Studies on a Novel CMOS Process for Depleted Monolithic Active Pixel Sensors. / Schioppa, Enrico Junior; Bates, Richard; Buttar, Craig et al.
2017 17th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2017. Institute of Electrical and Electronics Engineers Inc., 2017. 8696182 (2017 17th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2017).

Research output: Chapter in Book/Report/Conference proceedings › Chapter › peer-review

TY - CHAP

T1 - Radiation Hardness Studies on a Novel CMOS Process for Depleted Monolithic Active Pixel Sensors

AU - Schioppa, Enrico Junior

AU - Bates, Richard

AU - Buttar, Craig

AU - Dalla, Marco

AU - Van Hoorne, Jacobus Willem

AU - Kugathasan, Thanushan

AU - Maneuski, Dzmitry

AU - Tobon, Cesar Augusto Marin

AU - Musa, Luciano

AU - Pernegger, Heinz

AU - Riedler, Petra

AU - Riegel, Christian

AU - Sbarra, Carla

AU - Schaefer, Douglas Michael

AU - Sharma, Abhishek

AU - Snoeys, Walter

AU - Sanchez, Carlos Solans

PY - 2017/7/2

Y1 - 2017/7/2

N2 - Monolithic CMOS sensors are being proposed for the upgrade of the ATLAS inner tracker. Sensors fabricated in a new TowerJazz 180nm process, feature full depletion of the sensitive layer and radiation tolerance up to 1015neq/cm2.

AB - Monolithic CMOS sensors are being proposed for the upgrade of the ATLAS inner tracker. Sensors fabricated in a new TowerJazz 180nm process, feature full depletion of the sensitive layer and radiation tolerance up to 1015neq/cm2.

UR - https://www.scopus.com/pages/publications/85065578444

U2 - 10.1109/RADECS.2017.8696182

DO - 10.1109/RADECS.2017.8696182

M3 - Chapter

AN - SCOPUS:85065578444

T3 - 2017 17th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2017

BT - 2017 17th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2017

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 17th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2017

Y2 - 2 October 2017 through 6 October 2017

ER -

Schioppa EJ, Bates R, Buttar C, Dalla M, Van Hoorne JW, Kugathasan T et al. Radiation Hardness Studies on a Novel CMOS Process for Depleted Monolithic Active Pixel Sensors. In 2017 17th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2017. Institute of Electrical and Electronics Engineers Inc. 2017. 8696182. (2017 17th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2017). doi: 10.1109/RADECS.2017.8696182

Radiation Hardness Studies on a Novel CMOS Process for Depleted Monolithic Active Pixel Sensors

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