Radiative recombination and gain in InGaN/GaN quantum wells with in-rich nanoclusters

V. Z. Zubialevich; A. V. Danilchyk; E. V. Lutsenko; V. N. Pavlovskii; A. L. Gurskii; G. P. Yablonskii; B. Schineller; Y. Dikme; M. Luenenbuerger; M. Heuken; J. F. Woitok; H. Kalisch; R. H. Jansen

doi:10.1142/9789812770950_0043

Radiative recombination and gain in InGaN/GaN quantum wells with in-rich nanoclusters

V. Z. Zubialevich
, A. V. Danilchyk
, E. V. Lutsenko
, V. N. Pavlovskii
, A. L. Gurskii
, G. P. Yablonskii
, B. Schineller
, Y. Dikme
, M. Luenenbuerger
, M. Heuken
, J. F. Woitok
, H. Kalisch
, R. H. Jansen

Research output: Chapter in Book/Report/Conference proceedings › Chapter › peer-review

Abstract

Peculiarities of temperature and excitation intensity dependencies of radiative recombination of InGaN/GaN multiple quantum well (MQW) heterostructures grown on silicon were analysed to determine the participation of carriers localized in In-rich nanosized clusters in spontaneous emission, gain and lasing. X-ray diffraction measurements were carried out to characterize the structure of MQWs.

Original language	English
Title of host publication	Physics, Chemistry and Application of Nanostructures
Subtitle of host publication	Reviews and Short Notes: Proceedings of the International Conference on Nanomeeting 2007 Minsk, Belarus, 22 - 25 May 2007
Publisher	World Scientific Publishing Co.
Pages	196-199
Number of pages	4
ISBN (Electronic)	9789812770950
ISBN (Print)	9812705996, 9789812705990
DOIs	https://doi.org/10.1142/9789812770950_0043
Publication status	Published - 1 Jan 2007
Externally published	Yes

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10.1142/9789812770950_0043

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Zubialevich, V. Z., Danilchyk, A. V., Lutsenko, E. V., Pavlovskii, V. N., Gurskii, A. L., Yablonskii, G. P., Schineller, B., Dikme, Y., Luenenbuerger, M., Heuken, M., Woitok, J. F., Kalisch, H., & Jansen, R. H. (2007). Radiative recombination and gain in InGaN/GaN quantum wells with in-rich nanoclusters. In Physics, Chemistry and Application of Nanostructures: Reviews and Short Notes: Proceedings of the International Conference on Nanomeeting 2007 Minsk, Belarus, 22 - 25 May 2007 (pp. 196-199). World Scientific Publishing Co.. https://doi.org/10.1142/9789812770950_0043

Zubialevich, V. Z. ; Danilchyk, A. V. ; Lutsenko, E. V. et al. / Radiative recombination and gain in InGaN/GaN quantum wells with in-rich nanoclusters. Physics, Chemistry and Application of Nanostructures: Reviews and Short Notes: Proceedings of the International Conference on Nanomeeting 2007 Minsk, Belarus, 22 - 25 May 2007. World Scientific Publishing Co., 2007. pp. 196-199

@inbook{c0f0787ea9594ff48fbacbe07e4130a5,

title = "Radiative recombination and gain in InGaN/GaN quantum wells with in-rich nanoclusters",

abstract = "Peculiarities of temperature and excitation intensity dependencies of radiative recombination of InGaN/GaN multiple quantum well (MQW) heterostructures grown on silicon were analysed to determine the participation of carriers localized in In-rich nanosized clusters in spontaneous emission, gain and lasing. X-ray diffraction measurements were carried out to characterize the structure of MQWs.",

author = "Zubialevich, \{V. Z.\} and Danilchyk, \{A. V.\} and Lutsenko, \{E. V.\} and Pavlovskii, \{V. N.\} and Gurskii, \{A. L.\} and Yablonskii, \{G. P.\} and B. Schineller and Y. Dikme and M. Luenenbuerger and M. Heuken and Woitok, \{J. F.\} and H. Kalisch and Jansen, \{R. H.\}",

year = "2007",

month = jan,

day = "1",

doi = "10.1142/9789812770950\_0043",

language = "English",

isbn = "9812705996",

pages = "196--199",

booktitle = "Physics, Chemistry and Application of Nanostructures",

publisher = "World Scientific Publishing Co.",

}

Zubialevich, VZ, Danilchyk, AV, Lutsenko, EV, Pavlovskii, VN, Gurskii, AL, Yablonskii, GP, Schineller, B, Dikme, Y, Luenenbuerger, M, Heuken, M, Woitok, JF, Kalisch, H & Jansen, RH 2007, Radiative recombination and gain in InGaN/GaN quantum wells with in-rich nanoclusters. in Physics, Chemistry and Application of Nanostructures: Reviews and Short Notes: Proceedings of the International Conference on Nanomeeting 2007 Minsk, Belarus, 22 - 25 May 2007. World Scientific Publishing Co., pp. 196-199. https://doi.org/10.1142/9789812770950_0043

Radiative recombination and gain in InGaN/GaN quantum wells with in-rich nanoclusters. / Zubialevich, V. Z.; Danilchyk, A. V.; Lutsenko, E. V. et al.
Physics, Chemistry and Application of Nanostructures: Reviews and Short Notes: Proceedings of the International Conference on Nanomeeting 2007 Minsk, Belarus, 22 - 25 May 2007. World Scientific Publishing Co., 2007. p. 196-199.

Research output: Chapter in Book/Report/Conference proceedings › Chapter › peer-review

TY - CHAP

T1 - Radiative recombination and gain in InGaN/GaN quantum wells with in-rich nanoclusters

AU - Zubialevich, V. Z.

AU - Danilchyk, A. V.

AU - Lutsenko, E. V.

AU - Pavlovskii, V. N.

AU - Gurskii, A. L.

AU - Yablonskii, G. P.

AU - Schineller, B.

AU - Dikme, Y.

AU - Luenenbuerger, M.

AU - Heuken, M.

AU - Woitok, J. F.

AU - Kalisch, H.

AU - Jansen, R. H.

PY - 2007/1/1

Y1 - 2007/1/1

N2 - Peculiarities of temperature and excitation intensity dependencies of radiative recombination of InGaN/GaN multiple quantum well (MQW) heterostructures grown on silicon were analysed to determine the participation of carriers localized in In-rich nanosized clusters in spontaneous emission, gain and lasing. X-ray diffraction measurements were carried out to characterize the structure of MQWs.

AB - Peculiarities of temperature and excitation intensity dependencies of radiative recombination of InGaN/GaN multiple quantum well (MQW) heterostructures grown on silicon were analysed to determine the participation of carriers localized in In-rich nanosized clusters in spontaneous emission, gain and lasing. X-ray diffraction measurements were carried out to characterize the structure of MQWs.

UR - https://www.scopus.com/pages/publications/84968895088

U2 - 10.1142/9789812770950_0043

DO - 10.1142/9789812770950_0043

M3 - Chapter

AN - SCOPUS:84968895088

SN - 9812705996

SN - 9789812705990

SP - 196

EP - 199

BT - Physics, Chemistry and Application of Nanostructures

PB - World Scientific Publishing Co.

ER -

Zubialevich VZ, Danilchyk AV, Lutsenko EV, Pavlovskii VN, Gurskii AL, Yablonskii GP et al. Radiative recombination and gain in InGaN/GaN quantum wells with in-rich nanoclusters. In Physics, Chemistry and Application of Nanostructures: Reviews and Short Notes: Proceedings of the International Conference on Nanomeeting 2007 Minsk, Belarus, 22 - 25 May 2007. World Scientific Publishing Co. 2007. p. 196-199 doi: 10.1142/9789812770950_0043

Radiative recombination and gain in InGaN/GaN quantum wells with in-rich nanoclusters

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