Radiative recombination and gain in InGaN/GaN quantum wells with In-rich nanoclusters

  • V. Z. Zubialevich
  • , A. V. Danilchyk
  • , E. V. Lutsenko
  • , V. N. Pavlovskii
  • , A. L. Gurskii
  • , G. P. Yablonskii
  • , J. F. Woitok
  • , H. Kalisch
  • , R. H. Jansen
  • , B. Schineller
  • , Y. Dikme
  • , M. Luenenbuerger
  • , M. Heuken

Research output: Chapter in Book/Report/Conference proceedingsConference proceedingpeer-review

Abstract

Peculiarities of temperature and excitation intensity dependencies of radiative recombination of InGaN/GaN multiple quantum well (MQW) heterostructures grown on silicon were analysed to determine the participation of carriers localized in In-rich nanosized clusters in spontaneous emission, gain and lasing. X-ray diffraction measurements were carried out to characterize the structure of MQWs.

Original languageEnglish
Title of host publicationProceedings of the International Conference on Physics, Chemistry and Application of Nanostructures, NANOMEETING 2007 - Reviews and Short Notes
Pages196-199
Number of pages4
Publication statusPublished - 2007
Externally publishedYes
EventInternational Conference on Physics, Chemistry and Application of Nanostructures, NANOMEETING 2007 - Minsk, Belarus
Duration: 22 May 200725 May 2007

Publication series

NameProceedings of the International Conference on Physics, Chemistry and Application of Nanostructures, NANOMEETING 2007 - Reviews and Short Notes

Conference

ConferenceInternational Conference on Physics, Chemistry and Application of Nanostructures, NANOMEETING 2007
Country/TerritoryBelarus
CityMinsk
Period22/05/0725/05/07

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