Rapid, Low-Temperature Synthesis of Germanium Nanowires from Oligosilylgermane Precursors

New oligosilylgermane compounds with weak Ge-H bonds have been used as precursors for the rapid synthesis of germanium (Ge) nanowires in high yields (>80%), via a solution-liquid-solid (SLS) mechanism, using indium (In) nanoparticles as a seeding agent over a temperature range between 180 and 380 °C. Even at low growth temperatures, milligram quantities of Ge nanowires could be synthesized over a reaction period of between 5 and 10 min. The speed of release of Ge(0) into the reaction environment can be tuned by altering the precursor type, synthesis temperature, and the presence or lack of an oxidizing agent, such as tri-n-octylphosphine oxide (TOPO). Energy-dispersive X-ray analysis showed that silicon atoms from the precursors were not incorporated into the structure of the Ge nanowires. As both In and Ge facilitate reversible alloying with Li, Li-ion battery anodes fabricated with these nanowires cycled efficiently with specific capacities, i.e.,