Real time observation of reflectance anisotropy and reflection high-energy electron diffraction intensity oscillations during gas-source molecular-beam-epitaxy growth of Si and SiGe on Si(001)

A. R. Turner; M. E. Pemble; J. M. Fernndez; B. A. Joyce; J. Zhang; A. G. Taylor

doi:10.1103/PhysRevLett.74.3213

Real time observation of reflectance anisotropy and reflection high-energy electron diffraction intensity oscillations during gas-source molecular-beam-epitaxy growth of Si and SiGe on Si(001)

A. R. Turner
, M. E. Pemble
, J. M. Fernndez
, B. A. Joyce
, J. Zhang
, A. G. Taylor

Research output: Contribution to journal › Article › peer-review

Abstract

Dynamic reflectance anisotropy (RA) and simultaneous reflection high-energy electron diffraction intensity measurements on the gas source molecular-beam-epitaxy growth of Si and SiGe on Si(001) are presented for the first time. The RA signal was found to oscillate at a period corresponding to bilayer growth in both material systems, and it is explained in terms of a model based on the relative domain coverages and hence the Si dimer concentration in the two orthogonal 110 azimuths.

Original language	English
Pages (from-to)	3213-3216
Number of pages	4
Journal	Physical Review Letters
Volume	74
Issue number	16
DOIs	https://doi.org/10.1103/PhysRevLett.74.3213
Publication status	Published - 1995
Externally published	Yes

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10.1103/PhysRevLett.74.3213

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Turner, A. R., Pemble, M. E., Fernndez, J. M., Joyce, B. A., Zhang, J., & Taylor, A. G. (1995). Real time observation of reflectance anisotropy and reflection high-energy electron diffraction intensity oscillations during gas-source molecular-beam-epitaxy growth of Si and SiGe on Si(001). Physical Review Letters, 74(16), 3213-3216. https://doi.org/10.1103/PhysRevLett.74.3213

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title = "Real time observation of reflectance anisotropy and reflection high-energy electron diffraction intensity oscillations during gas-source molecular-beam-epitaxy growth of Si and SiGe on Si(001)",

abstract = "Dynamic reflectance anisotropy (RA) and simultaneous reflection high-energy electron diffraction intensity measurements on the gas source molecular-beam-epitaxy growth of Si and SiGe on Si(001) are presented for the first time. The RA signal was found to oscillate at a period corresponding to bilayer growth in both material systems, and it is explained in terms of a model based on the relative domain coverages and hence the Si dimer concentration in the two orthogonal 110 azimuths.",

author = "Turner, \{A. R.\} and Pemble, \{M. E.\} and Fernndez, \{J. M.\} and Joyce, \{B. A.\} and J. Zhang and Taylor, \{A. G.\}",

year = "1995",

doi = "10.1103/PhysRevLett.74.3213",

language = "English",

volume = "74",

pages = "3213--3216",

journal = "Physical Review Letters",

issn = "0031-9007",

publisher = "American Physical Society",

number = "16",

}

Turner, AR, Pemble, ME, Fernndez, JM, Joyce, BA, Zhang, J & Taylor, AG 1995, 'Real time observation of reflectance anisotropy and reflection high-energy electron diffraction intensity oscillations during gas-source molecular-beam-epitaxy growth of Si and SiGe on Si(001)', Physical Review Letters, vol. 74, no. 16, pp. 3213-3216. https://doi.org/10.1103/PhysRevLett.74.3213

Real time observation of reflectance anisotropy and reflection high-energy electron diffraction intensity oscillations during gas-source molecular-beam-epitaxy growth of Si and SiGe on Si(001). / Turner, A. R.; Pemble, M. E.; Fernndez, J. M. et al.
In: Physical Review Letters, Vol. 74, No. 16, 1995, p. 3213-3216.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Real time observation of reflectance anisotropy and reflection high-energy electron diffraction intensity oscillations during gas-source molecular-beam-epitaxy growth of Si and SiGe on Si(001)

AU - Turner, A. R.

AU - Pemble, M. E.

AU - Fernndez, J. M.

AU - Joyce, B. A.

AU - Zhang, J.

AU - Taylor, A. G.

PY - 1995

Y1 - 1995

N2 - Dynamic reflectance anisotropy (RA) and simultaneous reflection high-energy electron diffraction intensity measurements on the gas source molecular-beam-epitaxy growth of Si and SiGe on Si(001) are presented for the first time. The RA signal was found to oscillate at a period corresponding to bilayer growth in both material systems, and it is explained in terms of a model based on the relative domain coverages and hence the Si dimer concentration in the two orthogonal 110 azimuths.

AB - Dynamic reflectance anisotropy (RA) and simultaneous reflection high-energy electron diffraction intensity measurements on the gas source molecular-beam-epitaxy growth of Si and SiGe on Si(001) are presented for the first time. The RA signal was found to oscillate at a period corresponding to bilayer growth in both material systems, and it is explained in terms of a model based on the relative domain coverages and hence the Si dimer concentration in the two orthogonal 110 azimuths.

UR - https://www.scopus.com/pages/publications/0007371867

U2 - 10.1103/PhysRevLett.74.3213

DO - 10.1103/PhysRevLett.74.3213

M3 - Article

AN - SCOPUS:0007371867

SN - 0031-9007

VL - 74

SP - 3213

EP - 3216

JO - Physical Review Letters

JF - Physical Review Letters

IS - 16

ER -

Real time observation of reflectance anisotropy and reflection high-energy electron diffraction intensity oscillations during gas-source molecular-beam-epitaxy growth of Si and SiGe on Si(001)

Abstract

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