Recharging process of commercial floating-gate MOS transistor in dosimetry application

Stefan D. Ilić; Marko S. Andjelković; Russell Duane; Alberto J. Palma; Milija Sarajlić; Srboljub Stanković; Goran S. Ristić

doi:10.1016/j.microrel.2021.114322

Recharging process of commercial floating-gate MOS transistor in dosimetry application

Stefan D. Ilić
, Marko S. Andjelković
, Russell Duane
, Alberto J. Palma
, Milija Sarajlić
, Srboljub Stanković
, Goran S. Ristić

Tyndall IPES (Integrated Power)

Research output: Contribution to journal › Article › peer-review

Abstract

We investigated the recharging process of commercial floating gate device (EPAD) during the six different dose rates and ten irradiation cycles with the highest dose rate. Dose rate dependence of the floating gate dosimeter was observed from 1 Gy/h to 26 Gy/h (H₂O). There is no change of the dosimetric characteristic with a constant dose rate of 26 Gy/h for ten cycles. The absorbed dose does not affect the drift of the threshold voltage readings after the irradiation steps. The reprogramming characteristic is not degrading with the absorbed dose for the ten irradiation cycles, giving the promising potential in the application for dosimetric purposes.

Original language	English
Article number	114322
Journal	Microelectronics Reliability
Volume	126
DOIs	https://doi.org/10.1016/j.microrel.2021.114322
Publication status	Published - Nov 2021

Keywords

EPAD
Floating gate
Non-volatile memory
Programming cell
Radiation sensor
Recharging

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10.1016/j.microrel.2021.114322

Cite this

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title = "Recharging process of commercial floating-gate MOS transistor in dosimetry application",

abstract = "We investigated the recharging process of commercial floating gate device (EPAD) during the six different dose rates and ten irradiation cycles with the highest dose rate. Dose rate dependence of the floating gate dosimeter was observed from 1 Gy/h to 26 Gy/h (H2O). There is no change of the dosimetric characteristic with a constant dose rate of 26 Gy/h for ten cycles. The absorbed dose does not affect the drift of the threshold voltage readings after the irradiation steps. The reprogramming characteristic is not degrading with the absorbed dose for the ten irradiation cycles, giving the promising potential in the application for dosimetric purposes.",

keywords = "EPAD, Floating gate, Non-volatile memory, Programming cell, Radiation sensor, Recharging",

author = "Ili{\'c}, \{Stefan D.\} and Andjelkovi{\'c}, \{Marko S.\} and Russell Duane and Palma, \{Alberto J.\} and Milija Sarajli{\'c} and Srboljub Stankovi{\'c} and Risti{\'c}, \{Goran S.\}",

note = "Publisher Copyright: {\textcopyright} 2021 The Authors",

year = "2021",

month = nov,

doi = "10.1016/j.microrel.2021.114322",

language = "English",

volume = "126",

journal = "Microelectronics Reliability",

issn = "0026-2714",

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}

TY - JOUR

T1 - Recharging process of commercial floating-gate MOS transistor in dosimetry application

AU - Ilić, Stefan D.

AU - Andjelković, Marko S.

AU - Duane, Russell

AU - Palma, Alberto J.

AU - Sarajlić, Milija

AU - Stanković, Srboljub

AU - Ristić, Goran S.

PY - 2021/11

Y1 - 2021/11

N2 - We investigated the recharging process of commercial floating gate device (EPAD) during the six different dose rates and ten irradiation cycles with the highest dose rate. Dose rate dependence of the floating gate dosimeter was observed from 1 Gy/h to 26 Gy/h (H2O). There is no change of the dosimetric characteristic with a constant dose rate of 26 Gy/h for ten cycles. The absorbed dose does not affect the drift of the threshold voltage readings after the irradiation steps. The reprogramming characteristic is not degrading with the absorbed dose for the ten irradiation cycles, giving the promising potential in the application for dosimetric purposes.

AB - We investigated the recharging process of commercial floating gate device (EPAD) during the six different dose rates and ten irradiation cycles with the highest dose rate. Dose rate dependence of the floating gate dosimeter was observed from 1 Gy/h to 26 Gy/h (H2O). There is no change of the dosimetric characteristic with a constant dose rate of 26 Gy/h for ten cycles. The absorbed dose does not affect the drift of the threshold voltage readings after the irradiation steps. The reprogramming characteristic is not degrading with the absorbed dose for the ten irradiation cycles, giving the promising potential in the application for dosimetric purposes.

KW - EPAD

KW - Floating gate

KW - Non-volatile memory

KW - Programming cell

KW - Radiation sensor

KW - Recharging

UR - https://www.scopus.com/pages/publications/85120850474

U2 - 10.1016/j.microrel.2021.114322

DO - 10.1016/j.microrel.2021.114322

M3 - Article

AN - SCOPUS:85120850474

SN - 0026-2714

VL - 126

JO - Microelectronics Reliability

JF - Microelectronics Reliability

M1 - 114322

ER -

Recharging process of commercial floating-gate MOS transistor in dosimetry application

Abstract

Keywords

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