Reduced workfunction intermetallic seed layers allow growth of porous n-GaN and low resistivity, ohmic electron transport

Porous GaN crystals have been successfully grown and electrically contacted simultaneously on Pt-and Au-coated silicon substrates as porous crystals and as porous layers. By the direct reaction of metallic Ga and NH₃ gas through chemical vapor deposition, intermetallic metal-Ga alloys form at the GaN-metal interface, allowing vapor-solid-solid seeding and subsequent growth of porous GaN. Current-voltage and capacitance-voltage measurements confirm that the intermetallic seed layers prevent interface oxidation and give a high-quality reduced workfunction contact that allows exceptionally low contact resistivities. Additionally, the simultaneous formation of a lower workfunction intermetallic permits ohmic electron transport to n-type GaN grown using high workfunction metals that best catalyze the formation of porous GaN layers and may be employed to seed and ohmically contact a range of III-N compounds and alloys for broadband absorption and emission.