@inproceedings{a91847b1c87f408db8ef751177ba1008,
title = "Reducing internal field effects with high aluminum AlGaN quantum wells",
abstract = "Transition from heavy hole to crystal-field-split hole ground state is found to significantly reduce internal-field effects on optical properties, which should improve laser performance. The effect comes from increasing aluminum concentration in AlGaN quantum wells.",
author = "Chow, \{W. W.\} and S. Wieczorek and Fischer, \{A. J.\} and Crawford, \{M. H.\} and Allerman, \{A. A.\} and Lee, \{S. R.\}",
year = "2004",
language = "English",
series = "Conference Digest - IEEE International Semiconductor Laser Conference",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "89--90",
booktitle = "Conference Digest - IEEE International Semiconductor Laser Conference",
note = "Conference Digest - 2004 IEEE 19th International Semiconductor Laser Conference ; Conference date: 21-09-2004 Through 25-09-2004",
}