Reflectance anisotropy as a surface science probe of the growth of InAs on (001) GaAs by molecular beam epitaxy

S. R. Armstrong; M. E. Pemble; A. G. Taylor; P. N. Fawcette; J. H. Neave; B. A. Joyce; J. Zhang

doi:10.1063/1.109986

Reflectance anisotropy as a surface science probe of the growth of InAs on (001) GaAs by molecular beam epitaxy

S. R. Armstrong
, M. E. Pemble
, A. G. Taylor
, P. N. Fawcette
, J. H. Neave
, B. A. Joyce
, J. Zhang

Research output: Contribution to journal › Article › peer-review

Abstract

Reflectance anisotropy (RA) measurements for the initial stages of the growth of InAs on GaAs (001) by molecular beam epitaxy (MBE) are presented. It is demonstrated that the RA technique is capable of providing information regarding changes of surface In concentration on the 0.1 monolayer level in real time, at high temperatures (∼600°C), under real InAs MBE conditions. In addition, associated with the detection of subtle coverage variations, surface reconstruction changes detectable by electron diffraction are also readily detectable by the RA technique.

Original language	English
Pages (from-to)	503-505
Number of pages	3
Journal	Applied Physics Letters
Volume	63
Issue number	4
DOIs	https://doi.org/10.1063/1.109986
Publication status	Published - 1993
Externally published	Yes

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10.1063/1.109986

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@article{b378aed1432d40099e11d1002c32d78a,

title = "Reflectance anisotropy as a surface science probe of the growth of InAs on (001) GaAs by molecular beam epitaxy",

abstract = "Reflectance anisotropy (RA) measurements for the initial stages of the growth of InAs on GaAs (001) by molecular beam epitaxy (MBE) are presented. It is demonstrated that the RA technique is capable of providing information regarding changes of surface In concentration on the 0.1 monolayer level in real time, at high temperatures (∼600°C), under real InAs MBE conditions. In addition, associated with the detection of subtle coverage variations, surface reconstruction changes detectable by electron diffraction are also readily detectable by the RA technique.",

author = "Armstrong, \{S. R.\} and Pemble, \{M. E.\} and Taylor, \{A. G.\} and Fawcette, \{P. N.\} and Neave, \{J. H.\} and Joyce, \{B. A.\} and J. Zhang",

year = "1993",

doi = "10.1063/1.109986",

language = "English",

volume = "63",

pages = "503--505",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "4",

}

TY - JOUR

T1 - Reflectance anisotropy as a surface science probe of the growth of InAs on (001) GaAs by molecular beam epitaxy

AU - Armstrong, S. R.

AU - Pemble, M. E.

AU - Taylor, A. G.

AU - Fawcette, P. N.

AU - Neave, J. H.

AU - Joyce, B. A.

AU - Zhang, J.

PY - 1993

Y1 - 1993

N2 - Reflectance anisotropy (RA) measurements for the initial stages of the growth of InAs on GaAs (001) by molecular beam epitaxy (MBE) are presented. It is demonstrated that the RA technique is capable of providing information regarding changes of surface In concentration on the 0.1 monolayer level in real time, at high temperatures (∼600°C), under real InAs MBE conditions. In addition, associated with the detection of subtle coverage variations, surface reconstruction changes detectable by electron diffraction are also readily detectable by the RA technique.

AB - Reflectance anisotropy (RA) measurements for the initial stages of the growth of InAs on GaAs (001) by molecular beam epitaxy (MBE) are presented. It is demonstrated that the RA technique is capable of providing information regarding changes of surface In concentration on the 0.1 monolayer level in real time, at high temperatures (∼600°C), under real InAs MBE conditions. In addition, associated with the detection of subtle coverage variations, surface reconstruction changes detectable by electron diffraction are also readily detectable by the RA technique.

UR - https://www.scopus.com/pages/publications/0006758804

U2 - 10.1063/1.109986

DO - 10.1063/1.109986

M3 - Article

AN - SCOPUS:0006758804

SN - 0003-6951

VL - 63

SP - 503

EP - 505

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 4

ER -

Reflectance anisotropy as a surface science probe of the growth of InAs on (001) GaAs by molecular beam epitaxy

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