Reflectance anisotropy oscillations of the heteroepitaxial growth of AlAs and Al1-xGaxAs on GaAs(001) surfaces by molecular beam epitaxy

A. G. Taylor; A. R. Turner; B. A. Joyce; M. E. Pemble

doi:10.1016/S0039-6028(96)01294-0

Reflectance anisotropy oscillations of the heteroepitaxial growth of AlAs and Al_1-xGa_xAs on GaAs(001) surfaces by molecular beam epitaxy

A. G. Taylor
, A. R. Turner
, B. A. Joyce
, M. E. Pemble

Research output: Contribution to journal › Article › peer-review

Abstract

Reflectance anisotropy (RA) oscillations observed during the molecular beam epitaxial growth of AlAs and AlGaAs/AlAs heterostructures on singular GaAs(001) substrates have been investigated. A temperature dependence study of the AlAs oscillations was carried out in the temperature range 500-580°C and oscillations of large amplitude were readily detected. The effect of alloy stoichiometry on the oscillation amplitude was investigated and the amplitude was found to decrease as the Ga content of the alloy was increased. The origin of these oscillations is discussed in terms of the microscopic nature of the step edges associated with the islands formed during growth.

Original language	English
Pages (from-to)	367-373
Number of pages	7
Journal	Surface Science
Volume	375
Issue number	2-3
DOIs	https://doi.org/10.1016/S0039-6028(96)01294-0
Publication status	Published - 1 Apr 1997
Externally published	Yes

Keywords

Epitaxy
Gallium arsenide
Molecular beam epitaxy
Reflection anisotropy
Reflection spectroscopy
Semiconductor
Single crystal surfaces
Surface

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10.1016/S0039-6028(96)01294-0

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title = "Reflectance anisotropy oscillations of the heteroepitaxial growth of AlAs and Al1-xGaxAs on GaAs(001) surfaces by molecular beam epitaxy",

abstract = "Reflectance anisotropy (RA) oscillations observed during the molecular beam epitaxial growth of AlAs and AlGaAs/AlAs heterostructures on singular GaAs(001) substrates have been investigated. A temperature dependence study of the AlAs oscillations was carried out in the temperature range 500-580°C and oscillations of large amplitude were readily detected. The effect of alloy stoichiometry on the oscillation amplitude was investigated and the amplitude was found to decrease as the Ga content of the alloy was increased. The origin of these oscillations is discussed in terms of the microscopic nature of the step edges associated with the islands formed during growth.",

keywords = "Epitaxy, Gallium arsenide, Molecular beam epitaxy, Reflection anisotropy, Reflection spectroscopy, Semiconductor, Single crystal surfaces, Surface",

author = "Taylor, \{A. G.\} and Turner, \{A. R.\} and Joyce, \{B. A.\} and Pemble, \{M. E.\}",

year = "1997",

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doi = "10.1016/S0039-6028(96)01294-0",

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TY - JOUR

T1 - Reflectance anisotropy oscillations of the heteroepitaxial growth of AlAs and Al1-xGaxAs on GaAs(001) surfaces by molecular beam epitaxy

AU - Taylor, A. G.

AU - Turner, A. R.

AU - Joyce, B. A.

AU - Pemble, M. E.

PY - 1997/4/1

Y1 - 1997/4/1

N2 - Reflectance anisotropy (RA) oscillations observed during the molecular beam epitaxial growth of AlAs and AlGaAs/AlAs heterostructures on singular GaAs(001) substrates have been investigated. A temperature dependence study of the AlAs oscillations was carried out in the temperature range 500-580°C and oscillations of large amplitude were readily detected. The effect of alloy stoichiometry on the oscillation amplitude was investigated and the amplitude was found to decrease as the Ga content of the alloy was increased. The origin of these oscillations is discussed in terms of the microscopic nature of the step edges associated with the islands formed during growth.

AB - Reflectance anisotropy (RA) oscillations observed during the molecular beam epitaxial growth of AlAs and AlGaAs/AlAs heterostructures on singular GaAs(001) substrates have been investigated. A temperature dependence study of the AlAs oscillations was carried out in the temperature range 500-580°C and oscillations of large amplitude were readily detected. The effect of alloy stoichiometry on the oscillation amplitude was investigated and the amplitude was found to decrease as the Ga content of the alloy was increased. The origin of these oscillations is discussed in terms of the microscopic nature of the step edges associated with the islands formed during growth.

KW - Epitaxy

KW - Gallium arsenide

KW - Molecular beam epitaxy

KW - Reflection anisotropy

KW - Reflection spectroscopy

KW - Semiconductor

KW - Single crystal surfaces

KW - Surface

UR - https://www.scopus.com/pages/publications/0031123714

U2 - 10.1016/S0039-6028(96)01294-0

DO - 10.1016/S0039-6028(96)01294-0

M3 - Article

AN - SCOPUS:0031123714

SN - 0039-6028

VL - 375

SP - 367

EP - 373

JO - Surface Science

JF - Surface Science

IS - 2-3

ER -

Reflectance anisotropy oscillations of the heteroepitaxial growth of AlAs and Al_1-xGa_xAs on GaAs(001) surfaces by molecular beam epitaxy

Abstract

Keywords

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