Reflectivity measurements of internal cavity defects in semiconductor laser diodes

Paul Lambkin; Christopher Percival; Brian Corbett

Reflectivity measurements of internal cavity defects in semiconductor laser diodes

Paul Lambkin
, Christopher Percival
, Brian Corbett

University College Cork

Research output: Contribution to journal › Article › peer-review

Abstract

The presence of defects inside the cavity of a semiconductor laser can have a very strong influence on the emission spectrum. By carefully positioning a limited number of defects, it would be possible to achieve quasi-single longitudinal-mode operation. This paper shows that by a straightforward Fourier analysis of a sub-threshold laser spectrum one can extract the complex reflectivities of an internal scatterer.

Original language	English
Pages (from-to)	983-984
Number of pages	2
Journal	Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Volume	2
Publication status	Published - 2003
Event	2003 IEEE LEOS Annual Meeting Conference Proceedings - TUCSON, AZ, United States Duration: 26 Oct 2003 → 30 Oct 2003

Cite this

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title = "Reflectivity measurements of internal cavity defects in semiconductor laser diodes",

abstract = "The presence of defects inside the cavity of a semiconductor laser can have a very strong influence on the emission spectrum. By carefully positioning a limited number of defects, it would be possible to achieve quasi-single longitudinal-mode operation. This paper shows that by a straightforward Fourier analysis of a sub-threshold laser spectrum one can extract the complex reflectivities of an internal scatterer.",

author = "Paul Lambkin and Christopher Percival and Brian Corbett",

year = "2003",

language = "English",

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journal = "Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS",

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note = "2003 IEEE LEOS Annual Meeting Conference Proceedings ; Conference date: 26-10-2003 Through 30-10-2003",

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T1 - Reflectivity measurements of internal cavity defects in semiconductor laser diodes

AU - Lambkin, Paul

AU - Percival, Christopher

AU - Corbett, Brian

PY - 2003

Y1 - 2003

N2 - The presence of defects inside the cavity of a semiconductor laser can have a very strong influence on the emission spectrum. By carefully positioning a limited number of defects, it would be possible to achieve quasi-single longitudinal-mode operation. This paper shows that by a straightforward Fourier analysis of a sub-threshold laser spectrum one can extract the complex reflectivities of an internal scatterer.

AB - The presence of defects inside the cavity of a semiconductor laser can have a very strong influence on the emission spectrum. By carefully positioning a limited number of defects, it would be possible to achieve quasi-single longitudinal-mode operation. This paper shows that by a straightforward Fourier analysis of a sub-threshold laser spectrum one can extract the complex reflectivities of an internal scatterer.

UR - https://www.scopus.com/pages/publications/0345328265

M3 - Article

AN - SCOPUS:0345328265

SN - 1092-8081

VL - 2

SP - 983

EP - 984

JO - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

JF - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

T2 - 2003 IEEE LEOS Annual Meeting Conference Proceedings

Y2 - 26 October 2003 through 30 October 2003

ER -

Reflectivity measurements of internal cavity defects in semiconductor laser diodes

Abstract

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