Reflectivity Measurements of Intracavity Defects in Laser Diodes

Paul Lambkin; Christopher Percival; Brian Corbett

doi:10.1109/JQE.2003.820835

Reflectivity Measurements of Intracavity Defects in Laser Diodes

Paul Lambkin
, Christopher Percival
, Brian Corbett

University College Cork

Research output: Contribution to journal › Article › peer-review

Abstract

A method for measuring the complex reflectivity associated with a localized defect existing inside a laser diode cavity is presented. It relies on analyzing the magnitudes of resonant peaks in the Fourier transform of a subthreshold laser spectrum. Reflectivities between 0.01 and 0.02 with zero phase have been measured in a laser with a deliberately induced scattering center produced by standard lithographic techniques.

Original language	English
Pages (from-to)	10-17
Number of pages	8
Journal	IEEE Journal of Quantum Electronics
Volume	40
Issue number	1
DOIs	https://doi.org/10.1109/JQE.2003.820835
Publication status	Published - Jan 2004

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title = "Reflectivity Measurements of Intracavity Defects in Laser Diodes",

abstract = "A method for measuring the complex reflectivity associated with a localized defect existing inside a laser diode cavity is presented. It relies on analyzing the magnitudes of resonant peaks in the Fourier transform of a subthreshold laser spectrum. Reflectivities between 0.01 and 0.02 with zero phase have been measured in a laser with a deliberately induced scattering center produced by standard lithographic techniques.",

author = "Paul Lambkin and Christopher Percival and Brian Corbett",

year = "2004",

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doi = "10.1109/JQE.2003.820835",

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AU - Lambkin, Paul

AU - Percival, Christopher

AU - Corbett, Brian

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N2 - A method for measuring the complex reflectivity associated with a localized defect existing inside a laser diode cavity is presented. It relies on analyzing the magnitudes of resonant peaks in the Fourier transform of a subthreshold laser spectrum. Reflectivities between 0.01 and 0.02 with zero phase have been measured in a laser with a deliberately induced scattering center produced by standard lithographic techniques.

AB - A method for measuring the complex reflectivity associated with a localized defect existing inside a laser diode cavity is presented. It relies on analyzing the magnitudes of resonant peaks in the Fourier transform of a subthreshold laser spectrum. Reflectivities between 0.01 and 0.02 with zero phase have been measured in a laser with a deliberately induced scattering center produced by standard lithographic techniques.

UR - https://www.scopus.com/pages/publications/0742272664

U2 - 10.1109/JQE.2003.820835

DO - 10.1109/JQE.2003.820835

M3 - Article

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SP - 10

EP - 17

JO - IEEE Journal of Quantum Electronics

JF - IEEE Journal of Quantum Electronics

IS - 1

ER -

Reflectivity Measurements of Intracavity Defects in Laser Diodes

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