Refractive index dynamics of InAs/GaAs quantum dots

M. T. Crowley; J. Houlihan; T. Piwonski; I. O'Driscoll; D. P. Williams; E. P. O'Reilly; A. V. Uskov; G. Huyet

doi:10.1063/1.4813472

Refractive index dynamics of InAs/GaAs quantum dots

M. T. Crowley
, J. Houlihan
, T. Piwonski
, I. O'Driscoll
, D. P. Williams
, E. P. O'Reilly
, A. V. Uskov
, G. Huyet

Research output: Contribution to journal › Article › peer-review

Abstract

The refractive index dynamics of an InAs/InGaAs/GaAs dots-in-a-well semiconductor optical amplifier is calculated and compared with experimental results. The fast and slow recovery timescales together with the behaviour with increasing injection are reproduced and explained in terms of the density of carriers available in upper quantum dot and continuum states. Also, a Coulomb-mediated shift of the dot susceptibility is suggested as responsible for the fast recovery of the phase.

Original language	English
Article number	021114
Journal	Applied Physics Letters
Volume	103
Issue number	2
DOIs	https://doi.org/10.1063/1.4813472
Publication status	Published - 8 Jul 2013

Access to Document

10.1063/1.4813472

https://hdl.handle.net/10468/4283Licence: CC BY-NC-ND

Cite this

@article{bff1c1128df14cdf8dd2990daabea449,

title = "Refractive index dynamics of InAs/GaAs quantum dots",

abstract = "The refractive index dynamics of an InAs/InGaAs/GaAs dots-in-a-well semiconductor optical amplifier is calculated and compared with experimental results. The fast and slow recovery timescales together with the behaviour with increasing injection are reproduced and explained in terms of the density of carriers available in upper quantum dot and continuum states. Also, a Coulomb-mediated shift of the dot susceptibility is suggested as responsible for the fast recovery of the phase.",

author = "Crowley, \{M. T.\} and J. Houlihan and T. Piwonski and I. O'Driscoll and Williams, \{D. P.\} and O'Reilly, \{E. P.\} and Uskov, \{A. V.\} and G. Huyet",

year = "2013",

month = jul,

day = "8",

doi = "10.1063/1.4813472",

language = "English",

volume = "103",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "2",

}

TY - JOUR

T1 - Refractive index dynamics of InAs/GaAs quantum dots

AU - Crowley, M. T.

AU - Houlihan, J.

AU - Piwonski, T.

AU - O'Driscoll, I.

AU - Williams, D. P.

AU - O'Reilly, E. P.

AU - Uskov, A. V.

AU - Huyet, G.

PY - 2013/7/8

Y1 - 2013/7/8

N2 - The refractive index dynamics of an InAs/InGaAs/GaAs dots-in-a-well semiconductor optical amplifier is calculated and compared with experimental results. The fast and slow recovery timescales together with the behaviour with increasing injection are reproduced and explained in terms of the density of carriers available in upper quantum dot and continuum states. Also, a Coulomb-mediated shift of the dot susceptibility is suggested as responsible for the fast recovery of the phase.

AB - The refractive index dynamics of an InAs/InGaAs/GaAs dots-in-a-well semiconductor optical amplifier is calculated and compared with experimental results. The fast and slow recovery timescales together with the behaviour with increasing injection are reproduced and explained in terms of the density of carriers available in upper quantum dot and continuum states. Also, a Coulomb-mediated shift of the dot susceptibility is suggested as responsible for the fast recovery of the phase.

UR - https://www.scopus.com/pages/publications/84880449337

U2 - 10.1063/1.4813472

DO - 10.1063/1.4813472

M3 - Article

AN - SCOPUS:84880449337

SN - 0003-6951

VL - 103

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 2

M1 - 021114

ER -

Refractive index dynamics of InAs/GaAs quantum dots

Abstract

Access to Document

Other files and links

Fingerprint

Cite this