@inproceedings{80bd537e8fd54f70b8297050f4b6fd16,
title = "Relationship between capacitance and conductance in MOS capacitors",
abstract = "In this work, we describe how the frequency dependence of conductance (G) and capacitance (C) of a generic MOS capacitor results in peaks of the functions G/ω and - ωdC/dω. By means of TCAD simulations, we show that G/ω and -ωdC/dω peak at the same value and at the same frequency for every bias point from accumulation to inversion. We illustrate how the properties of the peaks change with the semiconductor doping (ND), oxide capacitance (COX), minority carrier lifetime (τg), interface defect parameters (NIT, σ) and majority carrier dielectric relaxation time (τr). Finally, we demonstrate how these insights on G/ω and -ωdC/dω can be used to extract COX, ND and τg from InGaAs MOSCAP measurements.",
keywords = "C-V, Characterization, doping, extraction technique, G-V, minority carrier lifetime, MOS, multi-frequency, oxide capacitance",
author = "E. Caruso and J. Lin and S. Monaghan and K. Cherkaoui and L. Floyd and F. Gity and P. Palestri and D. Esseni and L. Selmi and Hurley, \{P. K.\}",
note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 24th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2019 ; Conference date: 04-09-2019 Through 06-09-2019",
year = "2019",
month = sep,
doi = "10.1109/SISPAD.2019.8870553",
language = "English",
series = "International Conference on Simulation of Semiconductor Processes and Devices, SISPAD",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
editor = "Francesco Driussi",
booktitle = "Proceedings of 2019 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2019",
address = "United States",
}