Relevance of the purity level in a MetalOrganic Vapour Phase Epitaxy reactor environment for the growth of high quality pyramidal site-controlled Quantum Dots

V. Dimastrodonato; L. O. Mereni; R. J. Young; E. Pelucchi

doi:10.1016/j.jcrysgro.2010.09.011

Relevance of the purity level in a MetalOrganic Vapour Phase Epitaxy reactor environment for the growth of high quality pyramidal site-controlled Quantum Dots

V. Dimastrodonato
, L. O. Mereni
, R. J. Young
, E. Pelucchi

Research output: Contribution to journal › Article › peer-review

Abstract

We report in this work on the spectral purity of pyramidal site-controlled InGaAs/AlGaAs Quantum Dots grown by metal-organic vapour phase epitaxy on (1 1 1)B oriented GaAs substrates. Extremely sharp emission peaks were found, showing linewidths surprisingly narrow (∼27 μeV) and comparable to those that can be obtained by Molecular Beam Epitaxy in an ultra-high vacuum environment. A careful reactor handling is regarded as a crucial step toward the fabrication of high optical quality systems.

Original language	English
Pages (from-to)	119-122
Number of pages	4
Journal	Journal of Crystal Growth
Volume	315
Issue number	1
DOIs	https://doi.org/10.1016/j.jcrysgro.2010.09.011
Publication status	Published - 15 Jan 2011

Keywords

A1. Nanostructures
A3. Organometallic vapour phase epitaxy
B1. Arsenates
B2. Semiconducting IIIV materials

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10.1016/j.jcrysgro.2010.09.011

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abstract = "We report in this work on the spectral purity of pyramidal site-controlled InGaAs/AlGaAs Quantum Dots grown by metal-organic vapour phase epitaxy on (1 1 1)B oriented GaAs substrates. Extremely sharp emission peaks were found, showing linewidths surprisingly narrow (∼27 μeV) and comparable to those that can be obtained by Molecular Beam Epitaxy in an ultra-high vacuum environment. A careful reactor handling is regarded as a crucial step toward the fabrication of high optical quality systems.",

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doi = "10.1016/j.jcrysgro.2010.09.011",

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AU - Dimastrodonato, V.

AU - Mereni, L. O.

AU - Young, R. J.

AU - Pelucchi, E.

PY - 2011/1/15

Y1 - 2011/1/15

N2 - We report in this work on the spectral purity of pyramidal site-controlled InGaAs/AlGaAs Quantum Dots grown by metal-organic vapour phase epitaxy on (1 1 1)B oriented GaAs substrates. Extremely sharp emission peaks were found, showing linewidths surprisingly narrow (∼27 μeV) and comparable to those that can be obtained by Molecular Beam Epitaxy in an ultra-high vacuum environment. A careful reactor handling is regarded as a crucial step toward the fabrication of high optical quality systems.

AB - We report in this work on the spectral purity of pyramidal site-controlled InGaAs/AlGaAs Quantum Dots grown by metal-organic vapour phase epitaxy on (1 1 1)B oriented GaAs substrates. Extremely sharp emission peaks were found, showing linewidths surprisingly narrow (∼27 μeV) and comparable to those that can be obtained by Molecular Beam Epitaxy in an ultra-high vacuum environment. A careful reactor handling is regarded as a crucial step toward the fabrication of high optical quality systems.

KW - A1. Nanostructures

KW - A3. Organometallic vapour phase epitaxy

KW - B1. Arsenates

KW - B2. Semiconducting IIIV materials

UR - https://www.scopus.com/pages/publications/79551689867

U2 - 10.1016/j.jcrysgro.2010.09.011

DO - 10.1016/j.jcrysgro.2010.09.011

M3 - Article

AN - SCOPUS:79551689867

SN - 0022-0248

VL - 315

SP - 119

EP - 122

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1

ER -

Relevance of the purity level in a MetalOrganic Vapour Phase Epitaxy reactor environment for the growth of high quality pyramidal site-controlled Quantum Dots

Abstract

Keywords

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