Reliability Investigation of Cu/In TLP Bonding

Jong Bum Lee; How Yuan Hwang; Min Woo Rhee

doi:10.1007/s11664-014-3373-1

Reliability Investigation of Cu/In TLP Bonding

Jong Bum Lee
, How Yuan Hwang
, Min Woo Rhee

Agency for Science, Technology and Research, Singapore

Research output: Contribution to journal › Article › peer-review

Abstract

Die-attach bonding was evaluated using a transient liquid phase (TLP) bonding method on a Cu/In, Au/In and Cu-Sn3Ag metal stack. TLP bonding is a relatively low cost process since thin layers of material are used and, at the same time, has higher reliability due to the good thermal resistance of the intermetallic compounds (IMCs) formed. The bonded samples were aged at 300°C for 500 h and thermal cycled from −40°C to 125°C for 500 cycles. The results showed that the shear strength of the Cu/In joint was higher than that of the Au/In joint with increasing aging time. Cu/In specimens on a ceramic substrate also showed good reliability results during the thermal cycling test. Even though Cu/In TLP bonding is not popular in conventional electronics, it is suitable for high temperature electronics due to the simplicity of the IMC formation.

Original language	English
Pages (from-to)	435-441
Number of pages	7
Journal	Journal of Electronic Materials
Volume	44
Issue number	1
DOIs	https://doi.org/10.1007/s11664-014-3373-1
Publication status	Published - Jan 2015
Externally published	Yes

Keywords

die-attach bonding
high-temperature storage test
interfacial microstructure
rugged electronics
temperature cycle test
Transient liquid phase bonding

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10.1007/s11664-014-3373-1

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title = "Reliability Investigation of Cu/In TLP Bonding",

abstract = "Die-attach bonding was evaluated using a transient liquid phase (TLP) bonding method on a Cu/In, Au/In and Cu-Sn3Ag metal stack. TLP bonding is a relatively low cost process since thin layers of material are used and, at the same time, has higher reliability due to the good thermal resistance of the intermetallic compounds (IMCs) formed. The bonded samples were aged at 300°C for 500 h and thermal cycled from −40°C to 125°C for 500 cycles. The results showed that the shear strength of the Cu/In joint was higher than that of the Au/In joint with increasing aging time. Cu/In specimens on a ceramic substrate also showed good reliability results during the thermal cycling test. Even though Cu/In TLP bonding is not popular in conventional electronics, it is suitable for high temperature electronics due to the simplicity of the IMC formation.",

keywords = "die-attach bonding, high-temperature storage test, interfacial microstructure, rugged electronics, temperature cycle test, Transient liquid phase bonding",

author = "Lee, \{Jong Bum\} and Hwang, \{How Yuan\} and Rhee, \{Min Woo\}",

note = "Publisher Copyright: {\textcopyright} 2014, The Minerals, Metals \& Materials Society.",

year = "2015",

month = jan,

doi = "10.1007/s11664-014-3373-1",

language = "English",

volume = "44",

pages = "435--441",

journal = "Journal of Electronic Materials",

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T1 - Reliability Investigation of Cu/In TLP Bonding

AU - Lee, Jong Bum

AU - Hwang, How Yuan

AU - Rhee, Min Woo

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N2 - Die-attach bonding was evaluated using a transient liquid phase (TLP) bonding method on a Cu/In, Au/In and Cu-Sn3Ag metal stack. TLP bonding is a relatively low cost process since thin layers of material are used and, at the same time, has higher reliability due to the good thermal resistance of the intermetallic compounds (IMCs) formed. The bonded samples were aged at 300°C for 500 h and thermal cycled from −40°C to 125°C for 500 cycles. The results showed that the shear strength of the Cu/In joint was higher than that of the Au/In joint with increasing aging time. Cu/In specimens on a ceramic substrate also showed good reliability results during the thermal cycling test. Even though Cu/In TLP bonding is not popular in conventional electronics, it is suitable for high temperature electronics due to the simplicity of the IMC formation.

AB - Die-attach bonding was evaluated using a transient liquid phase (TLP) bonding method on a Cu/In, Au/In and Cu-Sn3Ag metal stack. TLP bonding is a relatively low cost process since thin layers of material are used and, at the same time, has higher reliability due to the good thermal resistance of the intermetallic compounds (IMCs) formed. The bonded samples were aged at 300°C for 500 h and thermal cycled from −40°C to 125°C for 500 cycles. The results showed that the shear strength of the Cu/In joint was higher than that of the Au/In joint with increasing aging time. Cu/In specimens on a ceramic substrate also showed good reliability results during the thermal cycling test. Even though Cu/In TLP bonding is not popular in conventional electronics, it is suitable for high temperature electronics due to the simplicity of the IMC formation.

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KW - high-temperature storage test

KW - interfacial microstructure

KW - rugged electronics

KW - temperature cycle test

KW - Transient liquid phase bonding

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Reliability Investigation of Cu/In TLP Bonding

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Keywords

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