Resistive Switching with Self-Rectifying Tunability and Influence of the Oxide Layer Thickness in Ni/HfO2/n+-Si RRAM Devices

Alberto  Rodríguez-Fernández; Samuel Aldana; Francesca Campabadal; Jordi Suñé; Enrique Miranda; Francisco Jiménez-Molinos

doi:10.1109/ted.2017.2717497

Resistive Switching with Self-Rectifying Tunability and Influence of the Oxide Layer Thickness in Ni/HfO2/n+-Si RRAM Devices

Alberto Rodríguez-Fernández
, Samuel Aldana
, Francesca Campabadal
, Jordi Suñé
, Enrique Miranda
, Francisco Jiménez-Molinos

Universitat Autònoma de Barcelona
University of Granada
Institut de Microelectrònica de Barcelona, IMB-CNM (CSIC)
University of Granada

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	3159-3166
Journal	IEEE Transactions on Electron Devices
Volume	64
Issue number	8
DOIs	https://doi.org/10.1109/ted.2017.2717497
Publication status	Published - Aug 2017
Externally published	Yes

Access to Document

10.1109/ted.2017.2717497

Cite this

@article{21cf2cfcd71947028fd6343bcdadf890,

title = "Resistive Switching with Self-Rectifying Tunability and Influence of the Oxide Layer Thickness in Ni/HfO2/n+-Si RRAM Devices",

author = "Alberto Rodr{\'i}guez-Fern{\'a}ndez and Samuel Aldana and Francesca Campabadal and Jordi Su{\~n}{\'e} and Enrique Miranda and Francisco Jim{\'e}nez-Molinos",

year = "2017",

month = aug,

doi = "10.1109/ted.2017.2717497",

language = "English",

volume = "64",

pages = "3159--3166",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "8",

}

TY - JOUR

T1 - Resistive Switching with Self-Rectifying Tunability and Influence of the Oxide Layer Thickness in Ni/HfO2/n+-Si RRAM Devices

AU - Rodríguez-Fernández, Alberto

AU - Aldana, Samuel

AU - Campabadal, Francesca

AU - Suñé, Jordi

AU - Miranda, Enrique

AU - Jiménez-Molinos, Francisco

PY - 2017/8

Y1 - 2017/8

UR - http://dx.doi.org/10.1109/ted.2017.2717497

U2 - 10.1109/ted.2017.2717497

DO - 10.1109/ted.2017.2717497

M3 - Article

SN - 0018-9383

VL - 64

SP - 3159

EP - 3166

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 8

ER -

Resistive Switching with Self-Rectifying Tunability and Influence of the Oxide Layer Thickness in Ni/HfO2/n+-Si RRAM Devices

Access to Document

Other files and links

Cite this