Resistivity simulation of CZT materials

Defects and the relations with the levels introduced in the gap are among the toughest remaining problems in II-VI semiconductors. Up to now, more than 30 levels have been detected without any clear identification and assignation for most of them. PICTS, TEES and TSC are well suited for such investigation, but not complete. A very useful complement is provided by numerical simulation of some properties and the comparison between calculation and experimental results. We have used a simple existing model using the neutrality equation and the Fermi-Dirac distributions. This model was improved to introduce more than three levels which is largely our case (30 levels, 5-6 bands). Carrier concentration and resistivity are then deduced. PICTS results are used as model input. Results and compensation processes are discussed.