Resonant-cavity-enhanced photodiode using silicon-on-Anything technology

V. S. Sinnis; M. Seto; M. H.W.A. Van Deurzen; H. G.R. Maas; R. Dekker; E. M.L. Alexander-Moonen; G. W. T'Hooft; W. Hoekstra; W. B. De Boer; M. J.J. Theunissen; A. P. Morrison

Resonant-cavity-enhanced photodiode using silicon-on-Anything technology

V. S. Sinnis
, M. Seto
, M. H.W.A. Van Deurzen
, H. G.R. Maas
, R. Dekker
, E. M.L. Alexander-Moonen
, G. W. T'Hooft
, W. Hoekstra
, W. B. De Boer
, M. J.J. Theunissen
, A. P. Morrison

Research output: Chapter in Book/Report/Conference proceedings › Chapter › peer-review

Abstract

We demonstrate for the first time resonant-cavity-enhanced photodiodes made with silicon-on-Anything technology. A metal mirror, used as the bottom reflector, shows an improved reflectivity compared to either a thin buried oxide of a silicon-on-insulator substrate or a Si/SiGe Bragg stack. The silicon-on-Anything diode exhibits a much lower leakage current . density than a Si/SiGe Bragg stack photodiode. We measure a peak responsivity. of 98 mA/W at 673 nm, and a temporal response corresponding approximately to a -3-dB bandwidth of 147 MHz.

Original language	English
Title of host publication	ESSDERC 1999 - Proceeding of the 29th European Solid-State Device Research Conference
Editors	R.P. Mertens, H. Grunbacher, H.E. Maes, G. Declerck
Publisher	IEEE Computer Society
Pages	524-527
Number of pages	4
ISBN (Electronic)	2863322451, 9782863322451
Publication status	Published - 1999
Externally published	Yes
Event	29th European Solid-State Device Research Conference, ESSDERC 1999 - Leuven, Belgium Duration: 13 Sep 1999 → 15 Sep 1999

Publication series

Name	European Solid-State Device Research Conference
Volume	13-15 Sept. 1999
ISSN (Print)	1930-8876

Conference

Conference	29th European Solid-State Device Research Conference, ESSDERC 1999
Country/Territory	Belgium
City	Leuven
Period	13/09/99 → 15/09/99

Cite this

Sinnis, V. S., Seto, M., Van Deurzen, M. H. W. A., Maas, H. G. R., Dekker, R., Alexander-Moonen, E. M. L., T'Hooft, G. W., Hoekstra, W., De Boer, W. B., Theunissen, M. J. J., & Morrison, A. P. (1999). Resonant-cavity-enhanced photodiode using silicon-on-Anything technology. In R. P. Mertens, H. Grunbacher, H. E. Maes, & G. Declerck (Eds.), ESSDERC 1999 - Proceeding of the 29th European Solid-State Device Research Conference (pp. 524-527). Article 1505555 (European Solid-State Device Research Conference; Vol. 13-15 Sept. 1999). IEEE Computer Society.

Sinnis, V. S. ; Seto, M. ; Van Deurzen, M. H.W.A. et al. / Resonant-cavity-enhanced photodiode using silicon-on-Anything technology. ESSDERC 1999 - Proceeding of the 29th European Solid-State Device Research Conference. editor / R.P. Mertens ; H. Grunbacher ; H.E. Maes ; G. Declerck. IEEE Computer Society, 1999. pp. 524-527 (European Solid-State Device Research Conference).

@inbook{665405ed7d634045a5e06f1a925d2ffe,

title = "Resonant-cavity-enhanced photodiode using silicon-on-Anything technology",

abstract = "We demonstrate for the first time resonant-cavity-enhanced photodiodes made with silicon-on-Anything technology. A metal mirror, used as the bottom reflector, shows an improved reflectivity compared to either a thin buried oxide of a silicon-on-insulator substrate or a Si/SiGe Bragg stack. The silicon-on-Anything diode exhibits a much lower leakage current . density than a Si/SiGe Bragg stack photodiode. We measure a peak responsivity. of 98 mA/W at 673 nm, and a temporal response corresponding approximately to a -3-dB bandwidth of 147 MHz.",

author = "Sinnis, \{V. S.\} and M. Seto and \{Van Deurzen\}, \{M. H.W.A.\} and Maas, \{H. G.R.\} and R. Dekker and Alexander-Moonen, \{E. M.L.\} and T'Hooft, \{G. W.\} and W. Hoekstra and \{De Boer\}, \{W. B.\} and Theunissen, \{M. J.J.\} and Morrison, \{A. P.\}",

year = "1999",

language = "English",

series = "European Solid-State Device Research Conference",

publisher = "IEEE Computer Society",

pages = "524--527",

editor = "R.P. Mertens and H. Grunbacher and H.E. Maes and G. Declerck",

booktitle = "ESSDERC 1999 - Proceeding of the 29th European Solid-State Device Research Conference",

address = "United States",

note = "29th European Solid-State Device Research Conference, ESSDERC 1999 ; Conference date: 13-09-1999 Through 15-09-1999",

}

Sinnis, VS, Seto, M, Van Deurzen, MHWA, Maas, HGR, Dekker, R, Alexander-Moonen, EML, T'Hooft, GW, Hoekstra, W, De Boer, WB, Theunissen, MJJ & Morrison, AP 1999, Resonant-cavity-enhanced photodiode using silicon-on-Anything technology. in RP Mertens, H Grunbacher, HE Maes & G Declerck (eds), ESSDERC 1999 - Proceeding of the 29th European Solid-State Device Research Conference., 1505555, European Solid-State Device Research Conference, vol. 13-15 Sept. 1999, IEEE Computer Society, pp. 524-527, 29th European Solid-State Device Research Conference, ESSDERC 1999, Leuven, Belgium, 13/09/99.

Resonant-cavity-enhanced photodiode using silicon-on-Anything technology. / Sinnis, V. S.; Seto, M.; Van Deurzen, M. H.W.A. et al.
ESSDERC 1999 - Proceeding of the 29th European Solid-State Device Research Conference. ed. / R.P. Mertens; H. Grunbacher; H.E. Maes; G. Declerck. IEEE Computer Society, 1999. p. 524-527 1505555 (European Solid-State Device Research Conference; Vol. 13-15 Sept. 1999).

Research output: Chapter in Book/Report/Conference proceedings › Chapter › peer-review

TY - CHAP

T1 - Resonant-cavity-enhanced photodiode using silicon-on-Anything technology

AU - Sinnis, V. S.

AU - Seto, M.

AU - Van Deurzen, M. H.W.A.

AU - Maas, H. G.R.

AU - Dekker, R.

AU - Alexander-Moonen, E. M.L.

AU - T'Hooft, G. W.

AU - Hoekstra, W.

AU - De Boer, W. B.

AU - Theunissen, M. J.J.

AU - Morrison, A. P.

PY - 1999

Y1 - 1999

N2 - We demonstrate for the first time resonant-cavity-enhanced photodiodes made with silicon-on-Anything technology. A metal mirror, used as the bottom reflector, shows an improved reflectivity compared to either a thin buried oxide of a silicon-on-insulator substrate or a Si/SiGe Bragg stack. The silicon-on-Anything diode exhibits a much lower leakage current . density than a Si/SiGe Bragg stack photodiode. We measure a peak responsivity. of 98 mA/W at 673 nm, and a temporal response corresponding approximately to a -3-dB bandwidth of 147 MHz.

AB - We demonstrate for the first time resonant-cavity-enhanced photodiodes made with silicon-on-Anything technology. A metal mirror, used as the bottom reflector, shows an improved reflectivity compared to either a thin buried oxide of a silicon-on-insulator substrate or a Si/SiGe Bragg stack. The silicon-on-Anything diode exhibits a much lower leakage current . density than a Si/SiGe Bragg stack photodiode. We measure a peak responsivity. of 98 mA/W at 673 nm, and a temporal response corresponding approximately to a -3-dB bandwidth of 147 MHz.

UR - https://www.scopus.com/pages/publications/84907899386

M3 - Chapter

AN - SCOPUS:84907899386

T3 - European Solid-State Device Research Conference

SP - 524

EP - 527

BT - ESSDERC 1999 - Proceeding of the 29th European Solid-State Device Research Conference

A2 - Mertens, R.P.

A2 - Grunbacher, H.

A2 - Maes, H.E.

A2 - Declerck, G.

PB - IEEE Computer Society

T2 - 29th European Solid-State Device Research Conference, ESSDERC 1999

Y2 - 13 September 1999 through 15 September 1999

ER -

Sinnis VS, Seto M, Van Deurzen MHWA, Maas HGR, Dekker R, Alexander-Moonen EML et al. Resonant-cavity-enhanced photodiode using silicon-on-Anything technology. In Mertens RP, Grunbacher H, Maes HE, Declerck G, editors, ESSDERC 1999 - Proceeding of the 29th European Solid-State Device Research Conference. IEEE Computer Society. 1999. p. 524-527. 1505555. (European Solid-State Device Research Conference).

Resonant-cavity-enhanced photodiode using silicon-on-Anything technology

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