Resonant Cavity Light Emitting Diode and Detector Using Epitaxial Liftoff

B. Corbett; L. Considine; S. Walsh; W. M. Kelly

doi:10.1109/68.257185

Resonant Cavity Light Emitting Diode and Detector Using Epitaxial Liftoff

B. Corbett
, L. Considine
, S. Walsh
, W. M. Kelly

University College Cork

Research output: Contribution to journal › Article › peer-review

Abstract

Epitaxial liftoff (ELO) is used in a novel manner to form arrays of vertical resonant cavity light emitting diodes (RCLED's) using two metal mirrors. The epitaxial layers consist of an InP/InGaAs p-i-n structure. Electroluminescence from the vertically emitting resonant cavity is measured CW at room temperature to have a spectral width of 9 meV in contrast to a photoluminescence spectral width of 51 meV for the unprocessed layers. The structure behaves as a resonant detector under reverse bias. Cavities formed in this manner will find wide application in surface emitting and detecting arrays and spatial light modulators, and as a means of studying the physics of spontaneous emission.

Original language	English
Pages (from-to)	1041-1043
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	5
Issue number	9
DOIs	https://doi.org/10.1109/68.257185
Publication status	Published - Sep 1993

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@article{ba1831bbe9a14150b84a0bd81ef72782,

title = "Resonant Cavity Light Emitting Diode and Detector Using Epitaxial Liftoff",

abstract = "Epitaxial liftoff (ELO) is used in a novel manner to form arrays of vertical resonant cavity light emitting diodes (RCLED's) using two metal mirrors. The epitaxial layers consist of an InP/InGaAs p-i-n structure. Electroluminescence from the vertically emitting resonant cavity is measured CW at room temperature to have a spectral width of 9 meV in contrast to a photoluminescence spectral width of 51 meV for the unprocessed layers. The structure behaves as a resonant detector under reverse bias. Cavities formed in this manner will find wide application in surface emitting and detecting arrays and spatial light modulators, and as a means of studying the physics of spontaneous emission.",

author = "B. Corbett and L. Considine and S. Walsh and Kelly, \{W. M.\}",

year = "1993",

month = sep,

doi = "10.1109/68.257185",

language = "English",

volume = "5",

pages = "1041--1043",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "9",

}

TY - JOUR

T1 - Resonant Cavity Light Emitting Diode and Detector Using Epitaxial Liftoff

AU - Corbett, B.

AU - Considine, L.

AU - Walsh, S.

AU - Kelly, W. M.

PY - 1993/9

Y1 - 1993/9

N2 - Epitaxial liftoff (ELO) is used in a novel manner to form arrays of vertical resonant cavity light emitting diodes (RCLED's) using two metal mirrors. The epitaxial layers consist of an InP/InGaAs p-i-n structure. Electroluminescence from the vertically emitting resonant cavity is measured CW at room temperature to have a spectral width of 9 meV in contrast to a photoluminescence spectral width of 51 meV for the unprocessed layers. The structure behaves as a resonant detector under reverse bias. Cavities formed in this manner will find wide application in surface emitting and detecting arrays and spatial light modulators, and as a means of studying the physics of spontaneous emission.

AB - Epitaxial liftoff (ELO) is used in a novel manner to form arrays of vertical resonant cavity light emitting diodes (RCLED's) using two metal mirrors. The epitaxial layers consist of an InP/InGaAs p-i-n structure. Electroluminescence from the vertically emitting resonant cavity is measured CW at room temperature to have a spectral width of 9 meV in contrast to a photoluminescence spectral width of 51 meV for the unprocessed layers. The structure behaves as a resonant detector under reverse bias. Cavities formed in this manner will find wide application in surface emitting and detecting arrays and spatial light modulators, and as a means of studying the physics of spontaneous emission.

UR - https://www.scopus.com/pages/publications/0027663911

U2 - 10.1109/68.257185

DO - 10.1109/68.257185

M3 - Article

AN - SCOPUS:0027663911

SN - 1041-1135

VL - 5

SP - 1041

EP - 1043

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 9

ER -

Resonant Cavity Light Emitting Diode and Detector Using Epitaxial Liftoff

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