Resonant cavity photodiode with Si1-xGex/Si bragg reflector

V. S. Sinnis; A. P. Morrison; M. Seto; W. B. De Boer; W. Hoekstra; S. De Jager

Resonant cavity photodiode with Si_1-xGe_x/Si bragg reflector

V. S. Sinnis
, A. P. Morrison
, M. Seto
, W. B. De Boer
, W. Hoekstra
, S. De Jager

School of Engineering and Architecture

Research output: Chapter in Book/Report/Conference proceedings › Conference proceeding › peer-review

Abstract

We report on a resonant cavity photodetector with a Si/SiGe quarter-wavelength -thickness bottom Bragg mirror, grown by low temperature chemical vapor deposition (LPCVD). We observe a responsivity of 0.31 AIW (59% external quantum efficiency) at the resonant wavelength of 673 nm.

Original language	English
Title of host publication	ESSDERC 1998 - Proceedings of the 28th European Solid-State Device Research Conference
Editors	A. Touboul, Y. Danto, H. Grunbacher
Publisher	IEEE Computer Society
Pages	580-583
Number of pages	4
ISBN (Electronic)	2863322346
Publication status	Published - 1998
Event	28th European Solid-State Device Research Conference, ESSDERC 1998 - Bordeaux, France Duration: 8 Sep 1998 → 10 Sep 1998

Publication series

Name	European Solid-State Device Research Conference
ISSN (Print)	1930-8876

Conference

Conference	28th European Solid-State Device Research Conference, ESSDERC 1998
Country/Territory	France
City	Bordeaux
Period	8/09/98 → 10/09/98

Cite this

Sinnis, V. S., Morrison, A. P., Seto, M., De Boer, W. B., Hoekstra, W., & De Jager, S. (1998). Resonant cavity photodiode with Si_1-xGe_x/Si bragg reflector. In A. Touboul, Y. Danto, & H. Grunbacher (Eds.), ESSDERC 1998 - Proceedings of the 28th European Solid-State Device Research Conference (pp. 580-583). Article 1503618 (European Solid-State Device Research Conference). IEEE Computer Society.

@inproceedings{e0c567cff3e540438b717bed28bc1b25,

title = "Resonant cavity photodiode with Si1-xGex/Si bragg reflector",

abstract = "We report on a resonant cavity photodetector with a Si/SiGe quarter-wavelength -thickness bottom Bragg mirror, grown by low temperature chemical vapor deposition (LPCVD). We observe a responsivity of 0.31 AIW (59\% external quantum efficiency) at the resonant wavelength of 673 nm.",

author = "Sinnis, \{V. S.\} and Morrison, \{A. P.\} and M. Seto and \{De Boer\}, \{W. B.\} and W. Hoekstra and \{De Jager\}, S.",

year = "1998",

language = "English",

series = "European Solid-State Device Research Conference",

publisher = "IEEE Computer Society",

pages = "580--583",

editor = "A. Touboul and Y. Danto and H. Grunbacher",

booktitle = "ESSDERC 1998 - Proceedings of the 28th European Solid-State Device Research Conference",

address = "United States",

note = "28th European Solid-State Device Research Conference, ESSDERC 1998 ; Conference date: 08-09-1998 Through 10-09-1998",

}

Sinnis, VS, Morrison, AP, Seto, M, De Boer, WB, Hoekstra, W & De Jager, S 1998, Resonant cavity photodiode with Si_1-xGe_x/Si bragg reflector. in A Touboul, Y Danto & H Grunbacher (eds), ESSDERC 1998 - Proceedings of the 28th European Solid-State Device Research Conference., 1503618, European Solid-State Device Research Conference, IEEE Computer Society, pp. 580-583, 28th European Solid-State Device Research Conference, ESSDERC 1998, Bordeaux, France, 8/09/98.

Resonant cavity photodiode with Si_1-xGe_x/Si bragg reflector. / Sinnis, V. S.; Morrison, A. P.; Seto, M. et al.
ESSDERC 1998 - Proceedings of the 28th European Solid-State Device Research Conference. ed. / A. Touboul; Y. Danto; H. Grunbacher. IEEE Computer Society, 1998. p. 580-583 1503618 (European Solid-State Device Research Conference).

Research output: Chapter in Book/Report/Conference proceedings › Conference proceeding › peer-review

TY - GEN

T1 - Resonant cavity photodiode with Si1-xGex/Si bragg reflector

AU - Sinnis, V. S.

AU - Morrison, A. P.

AU - Seto, M.

AU - De Boer, W. B.

AU - Hoekstra, W.

AU - De Jager, S.

PY - 1998

Y1 - 1998

N2 - We report on a resonant cavity photodetector with a Si/SiGe quarter-wavelength -thickness bottom Bragg mirror, grown by low temperature chemical vapor deposition (LPCVD). We observe a responsivity of 0.31 AIW (59% external quantum efficiency) at the resonant wavelength of 673 nm.

AB - We report on a resonant cavity photodetector with a Si/SiGe quarter-wavelength -thickness bottom Bragg mirror, grown by low temperature chemical vapor deposition (LPCVD). We observe a responsivity of 0.31 AIW (59% external quantum efficiency) at the resonant wavelength of 673 nm.

UR - https://www.scopus.com/pages/publications/84908191537

M3 - Conference proceeding

AN - SCOPUS:84908191537

T3 - European Solid-State Device Research Conference

SP - 580

EP - 583

BT - ESSDERC 1998 - Proceedings of the 28th European Solid-State Device Research Conference

A2 - Touboul, A.

A2 - Danto, Y.

A2 - Grunbacher, H.

PB - IEEE Computer Society

T2 - 28th European Solid-State Device Research Conference, ESSDERC 1998

Y2 - 8 September 1998 through 10 September 1998

ER -

Resonant cavity photodiode with Si_1-xGe_x/Si bragg reflector

Abstract

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