RF Co-Designed Single- and Multi-Band Acoustic-Wave Filter-LNAs with Intrinsic Switching

RF co-designed single- and multi-band acoustic-wave filter low noise amplifiers (AWFLNA) are reported. They are based on a single common emitter low-noise transistor configuration and complex-terminated acoustic-wave lumped element resonator (AWLR)-based bandpass filters (BPFs) that are used as input/output matching networks of the LNA core. The complex-terminated AWLR BPFs are formed by M in-series multi-resonant stages, each comprised of N acoustic-wave resonators (AWRs). Single-band and dual-band AWFLNA prototypes were manufactured and measured at the UHF band. They exhibit the following RF characteristics: Single-band AWFLNA: f_cen=1039.9 MHz, gain=14.5 dB, FBW=0.56kt², off-state isolation=35.4 dB, and NF= 1.99 dB; Dual-band AWFLNA: gain= 16.16 dB and 15.4 dB, FBW=0.97kt² and 0.69kt², off-state isolation=36.5 dB and 36.9 dB, and NF= 2.64 dB and 3.33 dB at center frequencies of 1030 MHz and 1040.1 MHz respectively.