@inproceedings{498ae69ee0444d3b86302a3c21ce1ffc,
title = "RF Plasma Monolayer Doping of Si Nanowires",
abstract = "For the first time a combination of monolayer doping with RF plasma treatment was used for low-temperature doping of Si nanowires (NW). To study the doping effect, the back-gate MOSFET formed with Si nanowires fabricated in silicon-on-insulator wafers, was used. Employment of transfer IdVbg characteristics of the back-gate Si NW MOSFETs gives us a possibility to extract source-drain contact resistance, effective electron mobility in the Si NW channel, resistivity and an average doping concentration of the Si NW after RF plasma treatment. It was shown that using an RF plasma treatment with a specific power of (1.0+2.0) W/cm2 for 15 minutes, at which a sample temperature does not exceed 350°C allows imbedding of the dopant impurity in the Si NW up to an average concentration above 1×1017 cm-3.",
keywords = "Back-gate MOSFET, Monolayer doping, RF plasma treatment, Si nanowire",
author = "Nazarov, \{Alexei N.\} and Gomeniuk, \{Yuri V.\} and Noel Kennedy and Glotov, \{Vladimir I.\} and Okholin, \{Pavel N.\} and Brenda Long and Nazarova, \{Tamara M.\} and Ray Duffy",
note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 9th IEEE International Conference on Nanomaterials: Applications and Properties, NAP 2019 ; Conference date: 15-09-2019 Through 20-09-2019",
year = "2019",
month = sep,
doi = "10.1109/NAP47236.2019.216943",
language = "English",
series = "Proceedings of the 2019 IEEE 9th International Conference on Nanomaterials: Applications and Properties, NAP 2019",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "Proceedings of the 2019 IEEE 9th International Conference on Nanomaterials",
address = "United States",
}