RF plasma treatment of shallow ion-implanted layers of germanium

RF plasma annealing (RFPA) and rapid thermal annealing (RTA) of high-dose implanted n-type and p-type amorphized Ge layers have been studied by Raman scattering spectroscopy and X-ray diffraction techniques. It is shown that recrystallization of n-Ge implanted by BF2+ ions requires higher RTA temperatures and power density of RFPA as compared to p-Ge implanted by P⁺ ions with the same dose. The RFPA has been performed at considerably lower temperatures than RTA and resulted in the formation of a sharp interface between the implanted and underlying Ge layers both for BF2+ ion implantation and P⁺ ions implantation.