Rhenium-doped MoS2 films

Toby Hallam; Scott Monaghan; Farzan Gity; Lida Ansari; Michael Schmidt; Clive Downing; Conor P. Cullen; Valeria Nicolosi; Paul K. Hurley; Georg S. Duesberg

doi:10.1063/1.4995220

Rhenium-doped MoS₂ films

Toby Hallam
, Scott Monaghan
, Farzan Gity
, Lida Ansari
, Michael Schmidt
, Clive Downing
, Conor P. Cullen
, Valeria Nicolosi
, Paul K. Hurley
, Georg S. Duesberg

Research output: Contribution to journal › Article › peer-review

Abstract

Tailoring the electrical properties of transition metal dichalcogenides by doping is one of the biggest challenges for the application of 2D materials in future electronic devices. Here, we report on a straightforward approach to the n-type doping of molybdenum disulfide (MoS₂) films with rhenium (Re). High-Resolution Scanning Transmission Electron Microscopy and Energy-Dispersive X-ray spectroscopy are used to identify Re in interstitial and lattice sites of the MoS₂ structure. Hall-effect measurements confirm the electron donating influence of Re in MoS₂, while the nominally undoped films exhibit a net p-type doping. Density functional theory (DFT) modelling indicates that Re on Mo sites is the origin of the n-type doping, whereas S-vacancies have a p-type nature, providing an explanation for the p-type behaviour of nominally undoped MoS₂ films.

Original language	English
Article number	203101
Journal	Applied Physics Letters
Volume	111
Issue number	20
DOIs	https://doi.org/10.1063/1.4995220
Publication status	Published - 13 Nov 2017

Access to Document

10.1063/1.4995220

https://hdl.handle.net/10468/5091Licence: CC BY-NC-ND

Cite this

@article{b76c237803fe4af4925419d28597d5c3,

title = "Rhenium-doped MoS2 films",

abstract = "Tailoring the electrical properties of transition metal dichalcogenides by doping is one of the biggest challenges for the application of 2D materials in future electronic devices. Here, we report on a straightforward approach to the n-type doping of molybdenum disulfide (MoS2) films with rhenium (Re). High-Resolution Scanning Transmission Electron Microscopy and Energy-Dispersive X-ray spectroscopy are used to identify Re in interstitial and lattice sites of the MoS2 structure. Hall-effect measurements confirm the electron donating influence of Re in MoS2, while the nominally undoped films exhibit a net p-type doping. Density functional theory (DFT) modelling indicates that Re on Mo sites is the origin of the n-type doping, whereas S-vacancies have a p-type nature, providing an explanation for the p-type behaviour of nominally undoped MoS2 films.",

author = "Toby Hallam and Scott Monaghan and Farzan Gity and Lida Ansari and Michael Schmidt and Clive Downing and Cullen, \{Conor P.\} and Valeria Nicolosi and Hurley, \{Paul K.\} and Duesberg, \{Georg S.\}",

note = "Publisher Copyright: {\textcopyright} 2017 Author(s).",

year = "2017",

month = nov,

day = "13",

doi = "10.1063/1.4995220",

language = "English",

volume = "111",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "20",

}

TY - JOUR

T1 - Rhenium-doped MoS2 films

AU - Hallam, Toby

AU - Monaghan, Scott

AU - Gity, Farzan

AU - Ansari, Lida

AU - Schmidt, Michael

AU - Downing, Clive

AU - Cullen, Conor P.

AU - Nicolosi, Valeria

AU - Hurley, Paul K.

AU - Duesberg, Georg S.

PY - 2017/11/13

Y1 - 2017/11/13

N2 - Tailoring the electrical properties of transition metal dichalcogenides by doping is one of the biggest challenges for the application of 2D materials in future electronic devices. Here, we report on a straightforward approach to the n-type doping of molybdenum disulfide (MoS2) films with rhenium (Re). High-Resolution Scanning Transmission Electron Microscopy and Energy-Dispersive X-ray spectroscopy are used to identify Re in interstitial and lattice sites of the MoS2 structure. Hall-effect measurements confirm the electron donating influence of Re in MoS2, while the nominally undoped films exhibit a net p-type doping. Density functional theory (DFT) modelling indicates that Re on Mo sites is the origin of the n-type doping, whereas S-vacancies have a p-type nature, providing an explanation for the p-type behaviour of nominally undoped MoS2 films.

AB - Tailoring the electrical properties of transition metal dichalcogenides by doping is one of the biggest challenges for the application of 2D materials in future electronic devices. Here, we report on a straightforward approach to the n-type doping of molybdenum disulfide (MoS2) films with rhenium (Re). High-Resolution Scanning Transmission Electron Microscopy and Energy-Dispersive X-ray spectroscopy are used to identify Re in interstitial and lattice sites of the MoS2 structure. Hall-effect measurements confirm the electron donating influence of Re in MoS2, while the nominally undoped films exhibit a net p-type doping. Density functional theory (DFT) modelling indicates that Re on Mo sites is the origin of the n-type doping, whereas S-vacancies have a p-type nature, providing an explanation for the p-type behaviour of nominally undoped MoS2 films.

UR - https://www.scopus.com/pages/publications/85034266664

U2 - 10.1063/1.4995220

DO - 10.1063/1.4995220

M3 - Article

AN - SCOPUS:85034266664

SN - 0003-6951

VL - 111

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 20

M1 - 203101

ER -

Rhenium-doped MoS₂ films

Abstract

Access to Document

Other files and links

Fingerprint

Cite this