RTN and PBTI-induced time-dependent variability of replacement metal-gate high-k InGaAs FinFETs

J. Franco; B. Kaczer; N. Waldron; Ph J. Roussel; A. Alian; M. A. Pourghaderi; Z. Ji; T. Grasser; T. Kauerauf; S. Sioncke; N. Collaert; A. Thean; G. Groeseneken

doi:10.1109/IEDM.2014.7047087

RTN and PBTI-induced time-dependent variability of replacement metal-gate high-k InGaAs FinFETs

J. Franco
, B. Kaczer
, N. Waldron
, Ph J. Roussel
, A. Alian
, M. A. Pourghaderi
, Z. Ji
, T. Grasser
, T. Kauerauf
, S. Sioncke
, N. Collaert
, A. Thean
, G. Groeseneken

Research output: Chapter in Book/Report/Conference proceedings › Conference proceeding › peer-review

Abstract

We study RTN and PBTI in nanoscale InGaAs FinFETs fabricated on 300mm Si wafers. The average instability is found to be comparable to planar structures, but significantly larger when compared to Si devices. Although the novel devices follow the same time-dependent variability statistics and the corresponding area-scaling as their Si counterparts, a larger stochastic impact of single defects on the device characteristic is found to induce larger aging-related variance. We ascribe this to a more percolative channel conduction induced by still excessive interface and channel defectivity.

Original language	English
Title of host publication	2014 IEEE International Electron Devices Meeting, IEDM 2014
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	20.2.1-20.2.4
Edition	February
ISBN (Electronic)	9781479980017
DOIs	https://doi.org/10.1109/IEDM.2014.7047087
Publication status	Published - 20 Feb 2015
Externally published	Yes
Event	2014 60th IEEE International Electron Devices Meeting, IEDM 2014 - San Francisco, United States Duration: 15 Dec 2014 → 17 Dec 2014

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
Number	February
Volume	2015-February
ISSN (Print)	0163-1918

Conference

Conference	2014 60th IEEE International Electron Devices Meeting, IEDM 2014
Country/Territory	United States
City	San Francisco
Period	15/12/14 → 17/12/14

Access to Document

10.1109/IEDM.2014.7047087

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Franco, J., Kaczer, B., Waldron, N., Roussel, P. J., Alian, A., Pourghaderi, M. A., Ji, Z., Grasser, T., Kauerauf, T., Sioncke, S., Collaert, N., Thean, A., & Groeseneken, G. (2015). RTN and PBTI-induced time-dependent variability of replacement metal-gate high-k InGaAs FinFETs. In 2014 IEEE International Electron Devices Meeting, IEDM 2014 (February ed., pp. 20.2.1-20.2.4). Article 7047087 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2015-February, No. February). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.2014.7047087

Franco, J. ; Kaczer, B. ; Waldron, N. et al. / RTN and PBTI-induced time-dependent variability of replacement metal-gate high-k InGaAs FinFETs. 2014 IEEE International Electron Devices Meeting, IEDM 2014. February. ed. Institute of Electrical and Electronics Engineers Inc., 2015. pp. 20.2.1-20.2.4 (Technical Digest - International Electron Devices Meeting, IEDM; February).

@inproceedings{9c609473cb5a4811998140e6f67f78a2,

title = "RTN and PBTI-induced time-dependent variability of replacement metal-gate high-k InGaAs FinFETs",

abstract = "We study RTN and PBTI in nanoscale InGaAs FinFETs fabricated on 300mm Si wafers. The average instability is found to be comparable to planar structures, but significantly larger when compared to Si devices. Although the novel devices follow the same time-dependent variability statistics and the corresponding area-scaling as their Si counterparts, a larger stochastic impact of single defects on the device characteristic is found to induce larger aging-related variance. We ascribe this to a more percolative channel conduction induced by still excessive interface and channel defectivity.",

author = "J. Franco and B. Kaczer and N. Waldron and Roussel, \{Ph J.\} and A. Alian and Pourghaderi, \{M. A.\} and Z. Ji and T. Grasser and T. Kauerauf and S. Sioncke and N. Collaert and A. Thean and G. Groeseneken",

note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; 2014 60th IEEE International Electron Devices Meeting, IEDM 2014 ; Conference date: 15-12-2014 Through 17-12-2014",

year = "2015",

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doi = "10.1109/IEDM.2014.7047087",

language = "English",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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}

Franco, J, Kaczer, B, Waldron, N, Roussel, PJ, Alian, A, Pourghaderi, MA, Ji, Z, Grasser, T, Kauerauf, T, Sioncke, S, Collaert, N, Thean, A & Groeseneken, G 2015, RTN and PBTI-induced time-dependent variability of replacement metal-gate high-k InGaAs FinFETs. in 2014 IEEE International Electron Devices Meeting, IEDM 2014. February edn, 7047087, Technical Digest - International Electron Devices Meeting, IEDM, no. February, vol. 2015-February, Institute of Electrical and Electronics Engineers Inc., pp. 20.2.1-20.2.4, 2014 60th IEEE International Electron Devices Meeting, IEDM 2014, San Francisco, United States, 15/12/14. https://doi.org/10.1109/IEDM.2014.7047087

RTN and PBTI-induced time-dependent variability of replacement metal-gate high-k InGaAs FinFETs. / Franco, J.; Kaczer, B.; Waldron, N. et al.
2014 IEEE International Electron Devices Meeting, IEDM 2014. February. ed. Institute of Electrical and Electronics Engineers Inc., 2015. p. 20.2.1-20.2.4 7047087 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2015-February, No. February).

Research output: Chapter in Book/Report/Conference proceedings › Conference proceeding › peer-review

TY - GEN

T1 - RTN and PBTI-induced time-dependent variability of replacement metal-gate high-k InGaAs FinFETs

AU - Franco, J.

AU - Kaczer, B.

AU - Waldron, N.

AU - Roussel, Ph J.

AU - Alian, A.

AU - Pourghaderi, M. A.

AU - Ji, Z.

AU - Grasser, T.

AU - Kauerauf, T.

AU - Sioncke, S.

AU - Collaert, N.

AU - Thean, A.

AU - Groeseneken, G.

PY - 2015/2/20

Y1 - 2015/2/20

N2 - We study RTN and PBTI in nanoscale InGaAs FinFETs fabricated on 300mm Si wafers. The average instability is found to be comparable to planar structures, but significantly larger when compared to Si devices. Although the novel devices follow the same time-dependent variability statistics and the corresponding area-scaling as their Si counterparts, a larger stochastic impact of single defects on the device characteristic is found to induce larger aging-related variance. We ascribe this to a more percolative channel conduction induced by still excessive interface and channel defectivity.

AB - We study RTN and PBTI in nanoscale InGaAs FinFETs fabricated on 300mm Si wafers. The average instability is found to be comparable to planar structures, but significantly larger when compared to Si devices. Although the novel devices follow the same time-dependent variability statistics and the corresponding area-scaling as their Si counterparts, a larger stochastic impact of single defects on the device characteristic is found to induce larger aging-related variance. We ascribe this to a more percolative channel conduction induced by still excessive interface and channel defectivity.

UR - https://www.scopus.com/pages/publications/84938257697

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BT - 2014 IEEE International Electron Devices Meeting, IEDM 2014

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2014 60th IEEE International Electron Devices Meeting, IEDM 2014

Y2 - 15 December 2014 through 17 December 2014

ER -

Franco J, Kaczer B, Waldron N, Roussel PJ, Alian A, Pourghaderi MA et al. RTN and PBTI-induced time-dependent variability of replacement metal-gate high-k InGaAs FinFETs. In 2014 IEEE International Electron Devices Meeting, IEDM 2014. February ed. Institute of Electrical and Electronics Engineers Inc. 2015. p. 20.2.1-20.2.4. 7047087. (Technical Digest - International Electron Devices Meeting, IEDM; February). doi: 10.1109/IEDM.2014.7047087

RTN and PBTI-induced time-dependent variability of replacement metal-gate high-k InGaAs FinFETs

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