Scaling potential and MOSFET integration of thermally stable Gd silicate dielectrics

H. D.B. Gottlob; M. Schmidt; A. Stefani; M. C. Lemme; H. Kurz; I. Z. Mitrovic; W. M. Davey; S. Hall; M. Werner; P. R. Chalker; K. Cherkaoui; P. K. Hurley; J. Piscator; O. Engström; S. B. Newcomb

doi:10.1016/j.mee.2009.03.084

Scaling potential and MOSFET integration of thermally stable Gd silicate dielectrics

H. D.B. Gottlob
, M. Schmidt
, A. Stefani
, M. C. Lemme
, H. Kurz
, I. Z. Mitrovic
, W. M. Davey
, S. Hall
, M. Werner
, P. R. Chalker
, K. Cherkaoui
, P. K. Hurley
, J. Piscator
, O. Engström
, S. B. Newcomb

Research output: Contribution to journal › Article › peer-review

Abstract

We investigate the potential of gadolinium silicate (GdSiO) as a thermally stable high-k gate dielectric in a gate first integration scheme. There silicon diffuses into gadolinium oxide (Gd₂O₃) from a silicon oxide (SiO₂) interlayer specifically prepared for this purpose. We report on the scaling potential based on detailed material analysis. Gate leakage current densities and EOT values are compatible with an ITRS requirement for low stand by power (LSTP). The applicability of this GdSiO process is demonstrated by fully functional silicon on insulator (SOI) metal oxide semiconductor field effect transistors (MOSFETs).

Original language	English
Pages (from-to)	1642-1645
Number of pages	4
Journal	Microelectronic Engineering
Volume	86
Issue number	7-9
DOIs	https://doi.org/10.1016/j.mee.2009.03.084
Publication status	Published - Jul 2009

Keywords

Gate first integration
High-k dielectric
Rare earth silicate
Silicate formation

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10.1016/j.mee.2009.03.084

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Gottlob, H. D. B., Schmidt, M., Stefani, A., Lemme, M. C., Kurz, H., Mitrovic, I. Z., Davey, W. M., Hall, S., Werner, M., Chalker, P. R., Cherkaoui, K., Hurley, P. K., Piscator, J., Engström, O., & Newcomb, S. B. (2009). Scaling potential and MOSFET integration of thermally stable Gd silicate dielectrics. Microelectronic Engineering, 86(7-9), 1642-1645. https://doi.org/10.1016/j.mee.2009.03.084

@article{75bce01930f74defbbc13921cb7ac751,

title = "Scaling potential and MOSFET integration of thermally stable Gd silicate dielectrics",

abstract = "We investigate the potential of gadolinium silicate (GdSiO) as a thermally stable high-k gate dielectric in a gate first integration scheme. There silicon diffuses into gadolinium oxide (Gd2O3) from a silicon oxide (SiO2) interlayer specifically prepared for this purpose. We report on the scaling potential based on detailed material analysis. Gate leakage current densities and EOT values are compatible with an ITRS requirement for low stand by power (LSTP). The applicability of this GdSiO process is demonstrated by fully functional silicon on insulator (SOI) metal oxide semiconductor field effect transistors (MOSFETs).",

keywords = "Gate first integration, High-k dielectric, Rare earth silicate, Silicate formation",

author = "Gottlob, \{H. D.B.\} and M. Schmidt and A. Stefani and Lemme, \{M. C.\} and H. Kurz and Mitrovic, \{I. Z.\} and Davey, \{W. M.\} and S. Hall and M. Werner and Chalker, \{P. R.\} and K. Cherkaoui and Hurley, \{P. K.\} and J. Piscator and O. Engstr{\"o}m and Newcomb, \{S. B.\}",

year = "2009",

month = jul,

doi = "10.1016/j.mee.2009.03.084",

language = "English",

volume = "86",

pages = "1642--1645",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier B.V.",

number = "7-9",

}

Gottlob, HDB, Schmidt, M, Stefani, A, Lemme, MC, Kurz, H, Mitrovic, IZ, Davey, WM, Hall, S, Werner, M, Chalker, PR, Cherkaoui, K , Hurley, PK, Piscator, J, Engström, O & Newcomb, SB 2009, 'Scaling potential and MOSFET integration of thermally stable Gd silicate dielectrics', Microelectronic Engineering, vol. 86, no. 7-9, pp. 1642-1645. https://doi.org/10.1016/j.mee.2009.03.084

TY - JOUR

T1 - Scaling potential and MOSFET integration of thermally stable Gd silicate dielectrics

AU - Gottlob, H. D.B.

AU - Schmidt, M.

AU - Stefani, A.

AU - Lemme, M. C.

AU - Kurz, H.

AU - Mitrovic, I. Z.

AU - Davey, W. M.

AU - Hall, S.

AU - Werner, M.

AU - Chalker, P. R.

AU - Cherkaoui, K.

AU - Hurley, P. K.

AU - Piscator, J.

AU - Engström, O.

AU - Newcomb, S. B.

PY - 2009/7

Y1 - 2009/7

N2 - We investigate the potential of gadolinium silicate (GdSiO) as a thermally stable high-k gate dielectric in a gate first integration scheme. There silicon diffuses into gadolinium oxide (Gd2O3) from a silicon oxide (SiO2) interlayer specifically prepared for this purpose. We report on the scaling potential based on detailed material analysis. Gate leakage current densities and EOT values are compatible with an ITRS requirement for low stand by power (LSTP). The applicability of this GdSiO process is demonstrated by fully functional silicon on insulator (SOI) metal oxide semiconductor field effect transistors (MOSFETs).

AB - We investigate the potential of gadolinium silicate (GdSiO) as a thermally stable high-k gate dielectric in a gate first integration scheme. There silicon diffuses into gadolinium oxide (Gd2O3) from a silicon oxide (SiO2) interlayer specifically prepared for this purpose. We report on the scaling potential based on detailed material analysis. Gate leakage current densities and EOT values are compatible with an ITRS requirement for low stand by power (LSTP). The applicability of this GdSiO process is demonstrated by fully functional silicon on insulator (SOI) metal oxide semiconductor field effect transistors (MOSFETs).

KW - Gate first integration

KW - High-k dielectric

KW - Rare earth silicate

KW - Silicate formation

UR - https://www.scopus.com/pages/publications/67349133216

U2 - 10.1016/j.mee.2009.03.084

DO - 10.1016/j.mee.2009.03.084

M3 - Article

AN - SCOPUS:67349133216

SN - 0167-9317

VL - 86

SP - 1642

EP - 1645

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 7-9

ER -

Scaling potential and MOSFET integration of thermally stable Gd silicate dielectrics

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