Schottky barrier height reduction for p-ZnSe contacts by sulfur treatment

Masaaki Onomura; Shinji Saito; John Rennie; Yukie Nishikawa; Peter J. Parbrook; Masayuki Ishikawa; Gen Ichi Hatakoshi

doi:10.1143/jjap.35.1428

Schottky barrier height reduction for p-ZnSe contacts by sulfur treatment

Masaaki Onomura
, Shinji Saito
, John Rennie
, Yukie Nishikawa
, Peter J. Parbrook
, Masayuki Ishikawa
, Gen Ichi Hatakoshi

Research output: Contribution to journal › Article › peer-review

Abstract

We have demonstrated the relationship between the structural and electrical properties of the chemically treated p-type ZnSe surface. The unstable Se-rich ZnSe surface, formed by an acid etchant, is shown to be removed by sulfur treatment. The sulfur treatment has been found to have the effect of lowering the Schottky barrier height at the Au/p-type ZnSe interface. This barrier lowering has been found to be effective in reducing the operation voltage of the ZnSe-based devices.

Original language	English
Pages (from-to)	1428-1430
Number of pages	3
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	35
Issue number	2 SUPPL. B
DOIs	https://doi.org/10.1143/jjap.35.1428
Publication status	Published - Feb 1996
Externally published	Yes

Keywords

AES
Schottky diode
Sulfur
Surface treatment
ZnSe

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10.1143/jjap.35.1428

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title = "Schottky barrier height reduction for p-ZnSe contacts by sulfur treatment",

abstract = "We have demonstrated the relationship between the structural and electrical properties of the chemically treated p-type ZnSe surface. The unstable Se-rich ZnSe surface, formed by an acid etchant, is shown to be removed by sulfur treatment. The sulfur treatment has been found to have the effect of lowering the Schottky barrier height at the Au/p-type ZnSe interface. This barrier lowering has been found to be effective in reducing the operation voltage of the ZnSe-based devices.",

keywords = "AES, Schottky diode, Sulfur, Surface treatment, ZnSe",

author = "Masaaki Onomura and Shinji Saito and John Rennie and Yukie Nishikawa and Parbrook, \{Peter J.\} and Masayuki Ishikawa and Hatakoshi, \{Gen Ichi\}",

year = "1996",

month = feb,

doi = "10.1143/jjap.35.1428",

language = "English",

volume = "35",

pages = "1428--1430",

journal = "Japanese Journal of Applied Physics, Part 2: Letters",

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TY - JOUR

T1 - Schottky barrier height reduction for p-ZnSe contacts by sulfur treatment

AU - Onomura, Masaaki

AU - Saito, Shinji

AU - Rennie, John

AU - Nishikawa, Yukie

AU - Parbrook, Peter J.

AU - Ishikawa, Masayuki

AU - Hatakoshi, Gen Ichi

PY - 1996/2

Y1 - 1996/2

N2 - We have demonstrated the relationship between the structural and electrical properties of the chemically treated p-type ZnSe surface. The unstable Se-rich ZnSe surface, formed by an acid etchant, is shown to be removed by sulfur treatment. The sulfur treatment has been found to have the effect of lowering the Schottky barrier height at the Au/p-type ZnSe interface. This barrier lowering has been found to be effective in reducing the operation voltage of the ZnSe-based devices.

AB - We have demonstrated the relationship between the structural and electrical properties of the chemically treated p-type ZnSe surface. The unstable Se-rich ZnSe surface, formed by an acid etchant, is shown to be removed by sulfur treatment. The sulfur treatment has been found to have the effect of lowering the Schottky barrier height at the Au/p-type ZnSe interface. This barrier lowering has been found to be effective in reducing the operation voltage of the ZnSe-based devices.

KW - AES

KW - Schottky diode

KW - Sulfur

KW - Surface treatment

KW - ZnSe

UR - https://www.scopus.com/pages/publications/0030079524

U2 - 10.1143/jjap.35.1428

DO - 10.1143/jjap.35.1428

M3 - Article

AN - SCOPUS:0030079524

SN - 0021-4922

VL - 35

SP - 1428

EP - 1430

JO - Japanese Journal of Applied Physics, Part 2: Letters

JF - Japanese Journal of Applied Physics, Part 2: Letters

IS - 2 SUPPL. B

ER -

Schottky barrier height reduction for p-ZnSe contacts by sulfur treatment

Abstract

Keywords

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