Screening of piezoelectric fields in InGaN quantum well laser structures

Iain H. Brown; Peter Blood; Peter M. Smowton; John D. Thomson; Santiago M. Olaizola; A. Mark Fox; Peter J. Parbrook; Weng W. Chow

doi:10.1109/islc.2006.1708096

Screening of piezoelectric fields in InGaN quantum well laser structures

Iain H. Brown
, Peter Blood
, Peter M. Smowton
, John D. Thomson
, Santiago M. Olaizola
, A. Mark Fox
, Peter J. Parbrook
, Weng W. Chow

Research output: Chapter in Book/Report/Conference proceedings › Chapter › peer-review

Abstract

By modelling time resolved emission spectra of 3 and 4 nm In _0.07Ga_0.93N quantum wells we show that injected carriers reduce the internal field to only 70% of its unscreened value at typical laser thresholds.

Original language	English
Title of host publication	2006 IEEE 20th International Semiconductor Laser Conference, ISLC - Conference Digest
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	81-82
Number of pages	2
ISBN (Print)	0780395603, 9780780395602
DOIs	https://doi.org/10.1109/islc.2006.1708096
Publication status	Published - 2006
Externally published	Yes
Event	2006 IEEE 20th International Semiconductor Laser Conference, ISLC - Kohala Coast, HI, United States Duration: 17 Sep 2006 → 21 Sep 2006

Publication series

Name	Conference Digest - IEEE International Semiconductor Laser Conference
ISSN (Print)	0899-9406

Conference

Conference	2006 IEEE 20th International Semiconductor Laser Conference, ISLC
Country/Territory	United States
City	Kohala Coast, HI
Period	17/09/06 → 21/09/06

Access to Document

10.1109/islc.2006.1708096

Cite this

Brown, I. H., Blood, P., Smowton, P. M., Thomson, J. D., Olaizola, S. M., Fox, A. M., Parbrook, P. J., & Chow, W. W. (2006). Screening of piezoelectric fields in InGaN quantum well laser structures. In 2006 IEEE 20th International Semiconductor Laser Conference, ISLC - Conference Digest (pp. 81-82). Article 1708096 (Conference Digest - IEEE International Semiconductor Laser Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/islc.2006.1708096

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title = "Screening of piezoelectric fields in InGaN quantum well laser structures",

abstract = "By modelling time resolved emission spectra of 3 and 4 nm In 0.07Ga0.93N quantum wells we show that injected carriers reduce the internal field to only 70\% of its unscreened value at typical laser thresholds.",

author = "Brown, \{Iain H.\} and Peter Blood and Smowton, \{Peter M.\} and Thomson, \{John D.\} and Olaizola, \{Santiago M.\} and Fox, \{A. Mark\} and Parbrook, \{Peter J.\} and Chow, \{Weng W.\}",

year = "2006",

doi = "10.1109/islc.2006.1708096",

language = "English",

isbn = "0780395603",

series = "Conference Digest - IEEE International Semiconductor Laser Conference",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "81--82",

booktitle = "2006 IEEE 20th International Semiconductor Laser Conference, ISLC - Conference Digest",

address = "United States",

note = "2006 IEEE 20th International Semiconductor Laser Conference, ISLC ; Conference date: 17-09-2006 Through 21-09-2006",

}

Brown, IH, Blood, P, Smowton, PM, Thomson, JD, Olaizola, SM, Fox, AM, Parbrook, PJ & Chow, WW 2006, Screening of piezoelectric fields in InGaN quantum well laser structures. in 2006 IEEE 20th International Semiconductor Laser Conference, ISLC - Conference Digest., 1708096, Conference Digest - IEEE International Semiconductor Laser Conference, Institute of Electrical and Electronics Engineers Inc., pp. 81-82, 2006 IEEE 20th International Semiconductor Laser Conference, ISLC, Kohala Coast, HI, United States, 17/09/06. https://doi.org/10.1109/islc.2006.1708096

Screening of piezoelectric fields in InGaN quantum well laser structures. / Brown, Iain H.; Blood, Peter; Smowton, Peter M. et al.
2006 IEEE 20th International Semiconductor Laser Conference, ISLC - Conference Digest. Institute of Electrical and Electronics Engineers Inc., 2006. p. 81-82 1708096 (Conference Digest - IEEE International Semiconductor Laser Conference).

Research output: Chapter in Book/Report/Conference proceedings › Chapter › peer-review

TY - CHAP

T1 - Screening of piezoelectric fields in InGaN quantum well laser structures

AU - Brown, Iain H.

AU - Blood, Peter

AU - Smowton, Peter M.

AU - Thomson, John D.

AU - Olaizola, Santiago M.

AU - Fox, A. Mark

AU - Parbrook, Peter J.

AU - Chow, Weng W.

PY - 2006

Y1 - 2006

N2 - By modelling time resolved emission spectra of 3 and 4 nm In 0.07Ga0.93N quantum wells we show that injected carriers reduce the internal field to only 70% of its unscreened value at typical laser thresholds.

AB - By modelling time resolved emission spectra of 3 and 4 nm In 0.07Ga0.93N quantum wells we show that injected carriers reduce the internal field to only 70% of its unscreened value at typical laser thresholds.

UR - https://www.scopus.com/pages/publications/41549093751

U2 - 10.1109/islc.2006.1708096

DO - 10.1109/islc.2006.1708096

M3 - Chapter

AN - SCOPUS:41549093751

SN - 0780395603

SN - 9780780395602

T3 - Conference Digest - IEEE International Semiconductor Laser Conference

SP - 81

EP - 82

BT - 2006 IEEE 20th International Semiconductor Laser Conference, ISLC - Conference Digest

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2006 IEEE 20th International Semiconductor Laser Conference, ISLC

Y2 - 17 September 2006 through 21 September 2006

ER -

Brown IH, Blood P, Smowton PM, Thomson JD, Olaizola SM, Fox AM et al. Screening of piezoelectric fields in InGaN quantum well laser structures. In 2006 IEEE 20th International Semiconductor Laser Conference, ISLC - Conference Digest. Institute of Electrical and Electronics Engineers Inc. 2006. p. 81-82. 1708096. (Conference Digest - IEEE International Semiconductor Laser Conference). doi: 10.1109/islc.2006.1708096

Screening of piezoelectric fields in InGaN quantum well laser structures

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