@inproceedings{a7a05c9c98a04d6ab582155aa18ba0ef,
title = "Selective area growth of InP on on-axis Si(001) substrates with low antiphase boundary formation",
abstract = "We discuss the selective epitaxial growth of InP on patterned Si (001) substrates with Shallow Trench Isolation using a thin Ge buffer to facilitate InP nucleation. The main focus is the defect formation mechanism during epitaxial growth and to develop solutions to reduce defect density so that device-quality III-V virtual substrates can be realized on large-scale Si substrates. We compare the InP growth on on-axis and off-axis Si substrates. In the case of off-axis wafers, the formation of stacking faults / twins cannot be avoided, at least not at one of the four STI side-walls. The formation of antiphase domain boundaries is reduced (but not yet completely eliminated) by engineering the local Ge surface profile. Further, the high density of Ge surface steps promotes step-flow growth mode instead of 3D growth during the growth of the InP seed layer. Finally, high aspect ratios (>2) allow to confine threading dislocations in the bottom of the trench.",
author = "R. Loo and G. Wang and T. Orzali and N. Waldron and C. Merckling and Leys, \{M. R.\} and O. Richard and H. Bender and P. Eyben and W. Vandervorst and M. Caymax",
year = "2011",
doi = "10.1149/1.3633305",
language = "English",
isbn = "9781566779074",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "7",
pages = "249--263",
booktitle = "ULSI Process Integration 7",
address = "United States",
edition = "7",
note = "7th Symposium on ULSI Process Integration - 220th ECS Meeting ; Conference date: 09-10-2011 Through 14-10-2011",
}