Selective-area metal organic vapor-phase epitaxy of III-V on Si: What about defect density?

C. Merckling; N. Waldron; S. Jiang; W. Guo; K. Barla; M. Heyns; N. Collaert; A. Thean; W. Vandervorst

doi:10.1149/06406.0513ecst

Selective-area metal organic vapor-phase epitaxy of III-V on Si: What about defect density?

C. Merckling
, N. Waldron
, S. Jiang
, W. Guo
, K. Barla
, M. Heyns
, N. Collaert
, A. Thean
, W. Vandervorst

Research output: Contribution to journal › Article › peer-review

Abstract

This study relates to the heteroepitaxy of InP buffer on patterned Si substrates using the selective area growth in trenches approach. We demonstrated in a first part a high control of the two-step InP buffer growth in STI trench width under 50 nm. In a second part, X-ray diffraction reciprocal space maps, rocking curves and pole figures were used to analyze the crystallinity and defect density of the InP layer.

Original language	English
Pages (from-to)	513-521
Number of pages	9
Journal	ECS Transactions
Volume	64
Issue number	6
DOIs	https://doi.org/10.1149/06406.0513ecst
Publication status	Published - 2014
Externally published	Yes
Event	6th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 2014 ECS and SMEQ Joint International Meeting - Cancun, Mexico Duration: 5 Oct 2014 → 9 Oct 2014

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10.1149/06406.0513ecst

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title = "Selective-area metal organic vapor-phase epitaxy of III-V on Si: What about defect density?",

abstract = "This study relates to the heteroepitaxy of InP buffer on patterned Si substrates using the selective area growth in trenches approach. We demonstrated in a first part a high control of the two-step InP buffer growth in STI trench width under 50 nm. In a second part, X-ray diffraction reciprocal space maps, rocking curves and pole figures were used to analyze the crystallinity and defect density of the InP layer.",

author = "C. Merckling and N. Waldron and S. Jiang and W. Guo and K. Barla and M. Heyns and N. Collaert and A. Thean and W. Vandervorst",

note = "Publisher Copyright: {\textcopyright} The Electrochemical Society.; 6th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 2014 ECS and SMEQ Joint International Meeting ; Conference date: 05-10-2014 Through 09-10-2014",

year = "2014",

doi = "10.1149/06406.0513ecst",

language = "English",

volume = "64",

pages = "513--521",

journal = "ECS Transactions",

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publisher = "Institute of Physics",

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TY - JOUR

T1 - Selective-area metal organic vapor-phase epitaxy of III-V on Si

T2 - 6th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 2014 ECS and SMEQ Joint International Meeting

AU - Merckling, C.

AU - Waldron, N.

AU - Jiang, S.

AU - Guo, W.

AU - Barla, K.

AU - Heyns, M.

AU - Collaert, N.

AU - Thean, A.

AU - Vandervorst, W.

N1 - Publisher Copyright: © The Electrochemical Society.

PY - 2014

Y1 - 2014

N2 - This study relates to the heteroepitaxy of InP buffer on patterned Si substrates using the selective area growth in trenches approach. We demonstrated in a first part a high control of the two-step InP buffer growth in STI trench width under 50 nm. In a second part, X-ray diffraction reciprocal space maps, rocking curves and pole figures were used to analyze the crystallinity and defect density of the InP layer.

AB - This study relates to the heteroepitaxy of InP buffer on patterned Si substrates using the selective area growth in trenches approach. We demonstrated in a first part a high control of the two-step InP buffer growth in STI trench width under 50 nm. In a second part, X-ray diffraction reciprocal space maps, rocking curves and pole figures were used to analyze the crystallinity and defect density of the InP layer.

UR - https://www.scopus.com/pages/publications/84921297462

U2 - 10.1149/06406.0513ecst

DO - 10.1149/06406.0513ecst

M3 - Article

AN - SCOPUS:84921297462

SN - 1938-5862

VL - 64

SP - 513

EP - 521

JO - ECS Transactions

JF - ECS Transactions

IS - 6

Y2 - 5 October 2014 through 9 October 2014

ER -

Selective-area metal organic vapor-phase epitaxy of III-V on Si: What about defect density?

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