Selective-area metal organic vapor-phase epitaxy of InGaAs/InP heterostrucures on si for advanced CMOS devices

C. Merckling; N. Waldron; S. Jiang; W. Guo; P. Ryan; N. Collaert; M. Caymax; K. Barla; M. Heyns; A. Thean; W. Vandervorst

doi:10.1149/06102.0107ecst

Selective-area metal organic vapor-phase epitaxy of InGaAs/InP heterostrucures on si for advanced CMOS devices

C. Merckling
, N. Waldron
, S. Jiang
, W. Guo
, P. Ryan
, N. Collaert
, M. Caymax
, K. Barla
, M. Heyns
, A. Thean
, W. Vandervorst

Research output: Contribution to journal › Article › peer-review

Abstract

This study relates to the heteroepitaxy of InP buffer and In_xGa_1-xAs channel layers on patterned Si substrates using the defect trapping technique. We focused on the optimization and control of the InP buffer layer in STI trenches to obtain low defect density and high mobility In_xGa_1-xAs channel layer. The demonstration of III-V heteroepitaxy at scaled dimensions opens the possibility for new applications integrated on Silicon.

Original language	English
Pages (from-to)	107-112
Number of pages	6
Journal	ECS Transactions
Volume	61
Issue number	2
DOIs	https://doi.org/10.1149/06102.0107ecst
Publication status	Published - 2014
Externally published	Yes
Event	6th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 225th ECS Meeting - Orlando, United States Duration: 11 May 2014 → 15 May 2014

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10.1149/06102.0107ecst

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title = "Selective-area metal organic vapor-phase epitaxy of InGaAs/InP heterostrucures on si for advanced CMOS devices",

abstract = "This study relates to the heteroepitaxy of InP buffer and InxGa1-xAs channel layers on patterned Si substrates using the defect trapping technique. We focused on the optimization and control of the InP buffer layer in STI trenches to obtain low defect density and high mobility InxGa1-xAs channel layer. The demonstration of III-V heteroepitaxy at scaled dimensions opens the possibility for new applications integrated on Silicon.",

author = "C. Merckling and N. Waldron and S. Jiang and W. Guo and P. Ryan and N. Collaert and M. Caymax and K. Barla and M. Heyns and A. Thean and W. Vandervorst",

note = "Publisher Copyright: {\textcopyright} 2014 by The Electrochemical Society. All rights reserved.; 6th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 225th ECS Meeting ; Conference date: 11-05-2014 Through 15-05-2014",

year = "2014",

doi = "10.1149/06102.0107ecst",

language = "English",

volume = "61",

pages = "107--112",

journal = "ECS Transactions",

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number = "2",

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TY - JOUR

T1 - Selective-area metal organic vapor-phase epitaxy of InGaAs/InP heterostrucures on si for advanced CMOS devices

AU - Merckling, C.

AU - Waldron, N.

AU - Jiang, S.

AU - Guo, W.

AU - Ryan, P.

AU - Collaert, N.

AU - Caymax, M.

AU - Barla, K.

AU - Heyns, M.

AU - Thean, A.

AU - Vandervorst, W.

PY - 2014

Y1 - 2014

N2 - This study relates to the heteroepitaxy of InP buffer and InxGa1-xAs channel layers on patterned Si substrates using the defect trapping technique. We focused on the optimization and control of the InP buffer layer in STI trenches to obtain low defect density and high mobility InxGa1-xAs channel layer. The demonstration of III-V heteroepitaxy at scaled dimensions opens the possibility for new applications integrated on Silicon.

AB - This study relates to the heteroepitaxy of InP buffer and InxGa1-xAs channel layers on patterned Si substrates using the defect trapping technique. We focused on the optimization and control of the InP buffer layer in STI trenches to obtain low defect density and high mobility InxGa1-xAs channel layer. The demonstration of III-V heteroepitaxy at scaled dimensions opens the possibility for new applications integrated on Silicon.

UR - https://www.scopus.com/pages/publications/84921305106

U2 - 10.1149/06102.0107ecst

DO - 10.1149/06102.0107ecst

M3 - Article

AN - SCOPUS:84921305106

SN - 1938-5862

VL - 61

SP - 107

EP - 112

JO - ECS Transactions

JF - ECS Transactions

IS - 2

T2 - 6th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 225th ECS Meeting

Y2 - 11 May 2014 through 15 May 2014

ER -

Selective-area metal organic vapor-phase epitaxy of InGaAs/InP heterostrucures on si for advanced CMOS devices

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