Selective metal-organic chemical vapor deposition growth of high quality GaAs on Si(001)

W. Guo; L. Date; V. Pena; X. Bao; C. Merckling; N. Waldron; N. Collaert; M. Caymax; E. Sanchez; E. Vancoille; K. Barla; A. Thean; P. Eyben; W. Vandervorst

doi:10.1063/1.4892468

Selective metal-organic chemical vapor deposition growth of high quality GaAs on Si(001)

W. Guo
, L. Date
, V. Pena
, X. Bao
, C. Merckling
, N. Waldron
, N. Collaert
, M. Caymax
, E. Sanchez
, E. Vancoille
, K. Barla
, A. Thean
, P. Eyben
, W. Vandervorst

Research output: Contribution to journal › Article › peer-review

Abstract

High quality GaAs is selectively grown in 40 nm width Shallow Trench Isolation patterned structures. The patterned wafers have a V-shape Si (111) surface obtained by Tetramethylammonium hydroxide etching. By employing a SiCoNi™ pre-epi clean and two-step growth procedure (low temperature buffer and high temperature main layer), defects are effectively confined at the trench bottom, leaving a dislocation-free GaAs layer at the upper part. The high crystal quality is confirmed by transmission electron microscopy. Scanning spreading resistance microscopy indicates a high resistance of GaAs. The process conditions and GaAs material quality are highly compatible with Si technology platform.

Original language	English
Article number	062101
Journal	Applied Physics Letters
Volume	105
Issue number	6
DOIs	https://doi.org/10.1063/1.4892468
Publication status	Published - 11 Aug 2014
Externally published	Yes

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10.1063/1.4892468

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title = "Selective metal-organic chemical vapor deposition growth of high quality GaAs on Si(001)",

abstract = "High quality GaAs is selectively grown in 40 nm width Shallow Trench Isolation patterned structures. The patterned wafers have a V-shape Si (111) surface obtained by Tetramethylammonium hydroxide etching. By employing a SiCoNi{\texttrademark} pre-epi clean and two-step growth procedure (low temperature buffer and high temperature main layer), defects are effectively confined at the trench bottom, leaving a dislocation-free GaAs layer at the upper part. The high crystal quality is confirmed by transmission electron microscopy. Scanning spreading resistance microscopy indicates a high resistance of GaAs. The process conditions and GaAs material quality are highly compatible with Si technology platform.",

author = "W. Guo and L. Date and V. Pena and X. Bao and C. Merckling and N. Waldron and N. Collaert and M. Caymax and E. Sanchez and E. Vancoille and K. Barla and A. Thean and P. Eyben and W. Vandervorst",

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doi = "10.1063/1.4892468",

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T1 - Selective metal-organic chemical vapor deposition growth of high quality GaAs on Si(001)

AU - Guo, W.

AU - Date, L.

AU - Pena, V.

AU - Bao, X.

AU - Merckling, C.

AU - Waldron, N.

AU - Collaert, N.

AU - Caymax, M.

AU - Sanchez, E.

AU - Vancoille, E.

AU - Barla, K.

AU - Thean, A.

AU - Eyben, P.

AU - Vandervorst, W.

PY - 2014/8/11

Y1 - 2014/8/11

N2 - High quality GaAs is selectively grown in 40 nm width Shallow Trench Isolation patterned structures. The patterned wafers have a V-shape Si (111) surface obtained by Tetramethylammonium hydroxide etching. By employing a SiCoNi™ pre-epi clean and two-step growth procedure (low temperature buffer and high temperature main layer), defects are effectively confined at the trench bottom, leaving a dislocation-free GaAs layer at the upper part. The high crystal quality is confirmed by transmission electron microscopy. Scanning spreading resistance microscopy indicates a high resistance of GaAs. The process conditions and GaAs material quality are highly compatible with Si technology platform.

AB - High quality GaAs is selectively grown in 40 nm width Shallow Trench Isolation patterned structures. The patterned wafers have a V-shape Si (111) surface obtained by Tetramethylammonium hydroxide etching. By employing a SiCoNi™ pre-epi clean and two-step growth procedure (low temperature buffer and high temperature main layer), defects are effectively confined at the trench bottom, leaving a dislocation-free GaAs layer at the upper part. The high crystal quality is confirmed by transmission electron microscopy. Scanning spreading resistance microscopy indicates a high resistance of GaAs. The process conditions and GaAs material quality are highly compatible with Si technology platform.

UR - https://www.scopus.com/pages/publications/84905992936

U2 - 10.1063/1.4892468

DO - 10.1063/1.4892468

M3 - Article

AN - SCOPUS:84905992936

SN - 0003-6951

VL - 105

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 6

M1 - 062101

ER -

Selective metal-organic chemical vapor deposition growth of high quality GaAs on Si(001)

Abstract

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