TY - GEN
T1 - Self-aligned ohmic contact scheme to InGaAs using epitaxial Ge growth
AU - Firrincieli, Andrea
AU - Vincent, B.
AU - Waldron, N.
AU - Simoen, E.
AU - Claeys, C.
AU - Kitti, J.
PY - 2011
Y1 - 2011
N2 - In this work we offer an integration-ready solution to obtain self-aligned ohmic contacts on n-type III-V layers. We demonstrate ohmic contacts on n-type In 0.53Ga 0.47As by means of selective growth of epitaxial Ge followed by selective Ni germaniation process. Circular Transfer Length Method (CTLM) is used to extract the values of the Specific Contact Resistivity ρ C of the contacts. Values of ρ C in the order of 4×10 -5 Ω-cm 2 have been measured. This scheme, if further optimized, can contribute to the development of MOSFETs devices based on high-mobility materials.
AB - In this work we offer an integration-ready solution to obtain self-aligned ohmic contacts on n-type III-V layers. We demonstrate ohmic contacts on n-type In 0.53Ga 0.47As by means of selective growth of epitaxial Ge followed by selective Ni germaniation process. Circular Transfer Length Method (CTLM) is used to extract the values of the Specific Contact Resistivity ρ C of the contacts. Values of ρ C in the order of 4×10 -5 Ω-cm 2 have been measured. This scheme, if further optimized, can contribute to the development of MOSFETs devices based on high-mobility materials.
UR - https://www.scopus.com/pages/publications/84858233862
M3 - Conference proceeding
AN - SCOPUS:84858233862
SN - 9781457717536
T3 - Conference Proceedings - International Conference on Indium Phosphide and Related Materials
BT - 2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials, CSW/IPRM 2011
T2 - 2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials, CSW/IPRM 2011
Y2 - 22 May 2011 through 26 May 2011
ER -