Self-heating in FinFET and GAA-NW using Si, Ge and III/V channels

E. Bury; B. Kaczer; D. Linten; L. Witters; H. Mertens; N. Waldron; X. Zhou; N. Collaert; N. Horiguchi; A. Spessot; G. Groeseneken

doi:10.1109/IEDM.2016.7838425

Self-heating in FinFET and GAA-NW using Si, Ge and III/V channels

E. Bury
, B. Kaczer
, D. Linten
, L. Witters
, H. Mertens
, N. Waldron
, X. Zhou
, N. Collaert
, N. Horiguchi
, A. Spessot
, G. Groeseneken

Research output: Chapter in Book/Report/Conference proceedings › Conference proceeding › peer-review

Abstract

The self-heating (SH) effect is studied experimentally and through simulations on an extensive set of industry-relevant solutions for FF and GAA-NW Si and high-mobility devices, with multiple processing options. Considerations for managing SH in future technologies are provided.

Original language	English
Title of host publication	2016 IEEE International Electron Devices Meeting, IEDM 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	15.6.1-15.6.4
ISBN (Electronic)	9781509039012
DOIs	https://doi.org/10.1109/IEDM.2016.7838425
Publication status	Published - 31 Jan 2017
Externally published	Yes
Event	62nd IEEE International Electron Devices Meeting, IEDM 2016 - San Francisco, United States Duration: 3 Dec 2016 → 7 Dec 2016

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Conference

Conference	62nd IEEE International Electron Devices Meeting, IEDM 2016
Country/Territory	United States
City	San Francisco
Period	3/12/16 → 7/12/16

Access to Document

10.1109/IEDM.2016.7838425

Cite this

Bury, E., Kaczer, B., Linten, D., Witters, L., Mertens, H., Waldron, N., Zhou, X., Collaert, N., Horiguchi, N., Spessot, A., & Groeseneken, G. (2017). Self-heating in FinFET and GAA-NW using Si, Ge and III/V channels. In 2016 IEEE International Electron Devices Meeting, IEDM 2016 (pp. 15.6.1-15.6.4). Article 7838425 (Technical Digest - International Electron Devices Meeting, IEDM). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.2016.7838425

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title = "Self-heating in FinFET and GAA-NW using Si, Ge and III/V channels",

abstract = "The self-heating (SH) effect is studied experimentally and through simulations on an extensive set of industry-relevant solutions for FF and GAA-NW Si and high-mobility devices, with multiple processing options. Considerations for managing SH in future technologies are provided.",

author = "E. Bury and B. Kaczer and D. Linten and L. Witters and H. Mertens and N. Waldron and X. Zhou and N. Collaert and N. Horiguchi and A. Spessot and G. Groeseneken",

note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 62nd IEEE International Electron Devices Meeting, IEDM 2016 ; Conference date: 03-12-2016 Through 07-12-2016",

year = "2017",

month = jan,

day = "31",

doi = "10.1109/IEDM.2016.7838425",

language = "English",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "15.6.1--15.6.4",

booktitle = "2016 IEEE International Electron Devices Meeting, IEDM 2016",

address = "United States",

}

Bury, E, Kaczer, B, Linten, D, Witters, L, Mertens, H, Waldron, N, Zhou, X, Collaert, N, Horiguchi, N, Spessot, A & Groeseneken, G 2017, Self-heating in FinFET and GAA-NW using Si, Ge and III/V channels. in 2016 IEEE International Electron Devices Meeting, IEDM 2016., 7838425, Technical Digest - International Electron Devices Meeting, IEDM, Institute of Electrical and Electronics Engineers Inc., pp. 15.6.1-15.6.4, 62nd IEEE International Electron Devices Meeting, IEDM 2016, San Francisco, United States, 3/12/16. https://doi.org/10.1109/IEDM.2016.7838425

Self-heating in FinFET and GAA-NW using Si, Ge and III/V channels. / Bury, E.; Kaczer, B.; Linten, D. et al.
2016 IEEE International Electron Devices Meeting, IEDM 2016. Institute of Electrical and Electronics Engineers Inc., 2017. p. 15.6.1-15.6.4 7838425 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceedings › Conference proceeding › peer-review

TY - GEN

T1 - Self-heating in FinFET and GAA-NW using Si, Ge and III/V channels

AU - Bury, E.

AU - Kaczer, B.

AU - Linten, D.

AU - Witters, L.

AU - Mertens, H.

AU - Waldron, N.

AU - Zhou, X.

AU - Collaert, N.

AU - Horiguchi, N.

AU - Spessot, A.

AU - Groeseneken, G.

PY - 2017/1/31

Y1 - 2017/1/31

N2 - The self-heating (SH) effect is studied experimentally and through simulations on an extensive set of industry-relevant solutions for FF and GAA-NW Si and high-mobility devices, with multiple processing options. Considerations for managing SH in future technologies are provided.

AB - The self-heating (SH) effect is studied experimentally and through simulations on an extensive set of industry-relevant solutions for FF and GAA-NW Si and high-mobility devices, with multiple processing options. Considerations for managing SH in future technologies are provided.

UR - https://www.scopus.com/pages/publications/85014503278

U2 - 10.1109/IEDM.2016.7838425

DO - 10.1109/IEDM.2016.7838425

M3 - Conference proceeding

AN - SCOPUS:85014503278

T3 - Technical Digest - International Electron Devices Meeting, IEDM

SP - 15.6.1-15.6.4

BT - 2016 IEEE International Electron Devices Meeting, IEDM 2016

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 62nd IEEE International Electron Devices Meeting, IEDM 2016

Y2 - 3 December 2016 through 7 December 2016

ER -

Bury E, Kaczer B, Linten D, Witters L, Mertens H, Waldron N et al. Self-heating in FinFET and GAA-NW using Si, Ge and III/V channels. In 2016 IEEE International Electron Devices Meeting, IEDM 2016. Institute of Electrical and Electronics Engineers Inc. 2017. p. 15.6.1-15.6.4. 7838425. (Technical Digest - International Electron Devices Meeting, IEDM). doi: 10.1109/IEDM.2016.7838425

Self-heating in FinFET and GAA-NW using Si, Ge and III/V channels

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