Semiconductor-less photovoltaic device

Fatih B. Atar; Enes Battal; Levent E. Aygun; Bihter Daglar; Mehmet Bayindir; Ali K. Okyay

doi:10.1109/IPCon.2013.6656693

Semiconductor-less photovoltaic device

Fatih B. Atar
, Enes Battal
, Levent E. Aygun
, Bihter Daglar
, Mehmet Bayindir
, Ali K. Okyay

Bilkent University

Research output: Chapter in Book/Report/Conference proceedings › Conference proceeding › peer-review

Abstract

We demonstrate a novel semiconductor-less photovoltaic device and investigate the plasmonic effects on this device structure. The device is made of metal and dielectric layers and the operation is based on hot carrier collection. We present the use of surface plasmons to improve energy conversion efficiency. The field localization provided by surface plasmons confine the incident light in the metal layer, increasing the optical absorption and hot electron generation rate inside the metal layer. The device consists of two tandem MIM (metal-insulator-metal) junctions. Bottom MIM junction acts as a rectifying diode and top MIM junction is used to excite surface plasmons. The device operation principle as well as the topology will be discussed in detail.

Original language	English
Title of host publication	2013 IEEE Photonics Conference, IPC 2013
Pages	574-575
Number of pages	2
DOIs	https://doi.org/10.1109/IPCon.2013.6656693
Publication status	Published - 2013
Externally published	Yes
Event	2013 26th IEEE Photonics Conference, IPC 2013 - Bellevue, WA, United States Duration: 8 Sep 2013 → 12 Sep 2013

Publication series

Name	2013 IEEE Photonics Conference, IPC 2013

Conference

Conference	2013 26th IEEE Photonics Conference, IPC 2013
Country/Territory	United States
City	Bellevue, WA
Period	8/09/13 → 12/09/13

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

Hot electron
metal-insulator-metal (MIM)
photovoltaics
surface plasmons

Access to Document

10.1109/IPCon.2013.6656693

Cite this

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title = "Semiconductor-less photovoltaic device",

abstract = "We demonstrate a novel semiconductor-less photovoltaic device and investigate the plasmonic effects on this device structure. The device is made of metal and dielectric layers and the operation is based on hot carrier collection. We present the use of surface plasmons to improve energy conversion efficiency. The field localization provided by surface plasmons confine the incident light in the metal layer, increasing the optical absorption and hot electron generation rate inside the metal layer. The device consists of two tandem MIM (metal-insulator-metal) junctions. Bottom MIM junction acts as a rectifying diode and top MIM junction is used to excite surface plasmons. The device operation principle as well as the topology will be discussed in detail.",

keywords = "Hot electron, metal-insulator-metal (MIM), photovoltaics, surface plasmons",

author = "Atar, \{Fatih B.\} and Enes Battal and Aygun, \{Levent E.\} and Bihter Daglar and Mehmet Bayindir and Okyay, \{Ali K.\}",

year = "2013",

doi = "10.1109/IPCon.2013.6656693",

language = "English",

isbn = "9781457715075",

series = "2013 IEEE Photonics Conference, IPC 2013",

pages = "574--575",

booktitle = "2013 IEEE Photonics Conference, IPC 2013",

note = "2013 26th IEEE Photonics Conference, IPC 2013 ; Conference date: 08-09-2013 Through 12-09-2013",

}

TY - GEN

T1 - Semiconductor-less photovoltaic device

AU - Atar, Fatih B.

AU - Battal, Enes

AU - Aygun, Levent E.

AU - Daglar, Bihter

AU - Bayindir, Mehmet

AU - Okyay, Ali K.

PY - 2013

Y1 - 2013

N2 - We demonstrate a novel semiconductor-less photovoltaic device and investigate the plasmonic effects on this device structure. The device is made of metal and dielectric layers and the operation is based on hot carrier collection. We present the use of surface plasmons to improve energy conversion efficiency. The field localization provided by surface plasmons confine the incident light in the metal layer, increasing the optical absorption and hot electron generation rate inside the metal layer. The device consists of two tandem MIM (metal-insulator-metal) junctions. Bottom MIM junction acts as a rectifying diode and top MIM junction is used to excite surface plasmons. The device operation principle as well as the topology will be discussed in detail.

AB - We demonstrate a novel semiconductor-less photovoltaic device and investigate the plasmonic effects on this device structure. The device is made of metal and dielectric layers and the operation is based on hot carrier collection. We present the use of surface plasmons to improve energy conversion efficiency. The field localization provided by surface plasmons confine the incident light in the metal layer, increasing the optical absorption and hot electron generation rate inside the metal layer. The device consists of two tandem MIM (metal-insulator-metal) junctions. Bottom MIM junction acts as a rectifying diode and top MIM junction is used to excite surface plasmons. The device operation principle as well as the topology will be discussed in detail.

KW - Hot electron

KW - metal-insulator-metal (MIM)

KW - photovoltaics

KW - surface plasmons

UR - https://www.scopus.com/pages/publications/84892731406

U2 - 10.1109/IPCon.2013.6656693

DO - 10.1109/IPCon.2013.6656693

M3 - Conference proceeding

AN - SCOPUS:84892731406

SN - 9781457715075

T3 - 2013 IEEE Photonics Conference, IPC 2013

SP - 574

EP - 575

BT - 2013 IEEE Photonics Conference, IPC 2013

T2 - 2013 26th IEEE Photonics Conference, IPC 2013

Y2 - 8 September 2013 through 12 September 2013

ER -

Semiconductor-less photovoltaic device

Abstract

Publication series

Conference

UN SDGs

Keywords

Access to Document

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