@inproceedings{46abb9a9b35f4e26bc4bdbe710d3759f,
title = "Semiconductor Technologies for next Generation Mobile Communications",
abstract = "In this work, we will address the opportunities and technology challenges related to next generation mobile communication. To enable the required data rates and reliability for 5G applications, Si CMOS will need to be complemented with new materials and device architectures like III-V or GaN devices to enable at the same time the targeted speed and power efficiency of these systems. Heterogeneous integration, either monolithic or using 3D integration, will be a key enabler to achieve this.",
author = "N. Collaert and A. Alian and Chen, \{S. H.\} and V. Deshpande and M. Ingels and V. Putcha and A. Sibaja-Hernandez and \{Van Liempd\}, B. and A. Vais and A. Vandooren and A. Walke and L. Witters and H. Yu and D. Linten and B. Parvais and P. Wambacq and N. Waldron",
note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 ; Conference date: 31-10-2018 Through 03-11-2018",
year = "2018",
month = dec,
day = "5",
doi = "10.1109/ICSICT.2018.8565822",
language = "English",
series = "2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
editor = "Ting-Ao Tang and Fan Ye and Yu-Long Jiang",
booktitle = "2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings",
address = "United States",
}