Semipolar (112¯2) InGaN light-emitting diodes grown on chemically-mechanically polished GaN templates

Duc V. Dinh; Mahbub Akhter; Silvino Presa; Grzegorz Kozlowski; Donagh O'Mahony; Pleun P. Maaskant; Frank Brunner; Marian Caliebe; Markus Weyers; Ferdinand Scholz; Brian Corbett; Peter J. Parbrook

doi:10.1002/pssa.201532350

Semipolar (112¯2) InGaN light-emitting diodes grown on chemically-mechanically polished GaN templates

Duc V. Dinh
, Mahbub Akhter
, Silvino Presa
, Grzegorz Kozlowski
, Donagh O'Mahony
, Pleun P. Maaskant
, Frank Brunner
, Marian Caliebe
, Markus Weyers
, Ferdinand Scholz
, Brian Corbett
, Peter J. Parbrook

Research output: Contribution to journal › Article › peer-review

Abstract

InGaN multiple quantum well light-emitting diodes (LEDs) were grown on chemically-mechanically polished (112¯2) GaN templates (up to 100 mm diameter wafers) by metalorganic vapour phase epitaxy. Initial GaN overgrowth on the polished templates in nitrogen ambient maintained the polished surface. The peak emission wavelength of the LEDs varied from 445 to 550 nm. In contrast to the simultaneously grown LEDs on as-grown templates, the LEDs on polished templates have very smooth surface morphology, uniform luminescence, and higher output power.

Original language	English
Pages (from-to)	2196-2200
Number of pages	5
Journal	Physica Status Solidi (A) Applications and Materials Science
Volume	212
Issue number	10
DOIs	https://doi.org/10.1002/pssa.201532350
Publication status	Published - 1 Oct 2015

Keywords

GaN templates
InGaN
Luminescence
metal-organic vapour phase epitaxy
nitrides
polishing
semipolar light-emitting diodes

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10.1002/pssa.201532350

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Dinh, D. V., Akhter, M., Presa, S., Kozlowski, G., O'Mahony, D., Maaskant, P. P., Brunner, F., Caliebe, M., Weyers, M., Scholz, F., Corbett, B., & Parbrook, P. J. (2015). Semipolar (112¯2) InGaN light-emitting diodes grown on chemically-mechanically polished GaN templates. Physica Status Solidi (A) Applications and Materials Science, 212(10), 2196-2200. https://doi.org/10.1002/pssa.201532350

@article{1989830e91714338a34b42e5d3828a35,

title = "Semipolar (112¯2) InGaN light-emitting diodes grown on chemically-mechanically polished GaN templates",

abstract = "InGaN multiple quantum well light-emitting diodes (LEDs) were grown on chemically-mechanically polished (112¯2) GaN templates (up to 100 mm diameter wafers) by metalorganic vapour phase epitaxy. Initial GaN overgrowth on the polished templates in nitrogen ambient maintained the polished surface. The peak emission wavelength of the LEDs varied from 445 to 550 nm. In contrast to the simultaneously grown LEDs on as-grown templates, the LEDs on polished templates have very smooth surface morphology, uniform luminescence, and higher output power.",

keywords = "GaN templates, InGaN, Luminescence, metal-organic vapour phase epitaxy, nitrides, polishing, semipolar light-emitting diodes",

author = "Dinh, \{Duc V.\} and Mahbub Akhter and Silvino Presa and Grzegorz Kozlowski and Donagh O'Mahony and Maaskant, \{Pleun P.\} and Frank Brunner and Marian Caliebe and Markus Weyers and Ferdinand Scholz and Brian Corbett and Parbrook, \{Peter J.\}",

note = "Publisher Copyright: {\textcopyright} 2015 WILEY-VCH Verlag GmbH \& Co. KGaA, Weinheim.",

year = "2015",

month = oct,

day = "1",

doi = "10.1002/pssa.201532350",

language = "English",

volume = "212",

pages = "2196--2200",

journal = "Physica Status Solidi (A) Applications and Materials Science",

issn = "1862-6300",

publisher = "Wiley-VCH Verlag",

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}

Dinh, DV, Akhter, M, Presa, S, Kozlowski, G, O'Mahony, D, Maaskant, PP, Brunner, F, Caliebe, M, Weyers, M, Scholz, F, Corbett, B & Parbrook, PJ 2015, 'Semipolar (112¯2) InGaN light-emitting diodes grown on chemically-mechanically polished GaN templates', Physica Status Solidi (A) Applications and Materials Science, vol. 212, no. 10, pp. 2196-2200. https://doi.org/10.1002/pssa.201532350

TY - JOUR

T1 - Semipolar (112¯2) InGaN light-emitting diodes grown on chemically-mechanically polished GaN templates

AU - Dinh, Duc V.

AU - Akhter, Mahbub

AU - Presa, Silvino

AU - Kozlowski, Grzegorz

AU - O'Mahony, Donagh

AU - Maaskant, Pleun P.

AU - Brunner, Frank

AU - Caliebe, Marian

AU - Weyers, Markus

AU - Scholz, Ferdinand

AU - Corbett, Brian

AU - Parbrook, Peter J.

PY - 2015/10/1

Y1 - 2015/10/1

N2 - InGaN multiple quantum well light-emitting diodes (LEDs) were grown on chemically-mechanically polished (112¯2) GaN templates (up to 100 mm diameter wafers) by metalorganic vapour phase epitaxy. Initial GaN overgrowth on the polished templates in nitrogen ambient maintained the polished surface. The peak emission wavelength of the LEDs varied from 445 to 550 nm. In contrast to the simultaneously grown LEDs on as-grown templates, the LEDs on polished templates have very smooth surface morphology, uniform luminescence, and higher output power.

AB - InGaN multiple quantum well light-emitting diodes (LEDs) were grown on chemically-mechanically polished (112¯2) GaN templates (up to 100 mm diameter wafers) by metalorganic vapour phase epitaxy. Initial GaN overgrowth on the polished templates in nitrogen ambient maintained the polished surface. The peak emission wavelength of the LEDs varied from 445 to 550 nm. In contrast to the simultaneously grown LEDs on as-grown templates, the LEDs on polished templates have very smooth surface morphology, uniform luminescence, and higher output power.

KW - GaN templates

KW - InGaN

KW - Luminescence

KW - metal-organic vapour phase epitaxy

KW - nitrides

KW - polishing

KW - semipolar light-emitting diodes

UR - https://www.scopus.com/pages/publications/84943817987

U2 - 10.1002/pssa.201532350

DO - 10.1002/pssa.201532350

M3 - Article

AN - SCOPUS:84943817987

SN - 1862-6300

VL - 212

SP - 2196

EP - 2200

JO - Physica Status Solidi (A) Applications and Materials Science

JF - Physica Status Solidi (A) Applications and Materials Science

IS - 10

ER -

Semipolar (112¯2) InGaN light-emitting diodes grown on chemically-mechanically polished GaN templates

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Keywords

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