Semipolar (202¯3) nitrides grown on 3C-SiC/(001) Si substrates

Duc V. Dinh; S. Presa; M. Akhter; P. P. Maaskant; B. Corbett; P. J. Parbrook

doi:10.1088/0268-1242/30/12/125007

Semipolar (202¯3) nitrides grown on 3C-SiC/(001) Si substrates

Duc V. Dinh
, S. Presa
, M. Akhter
, P. P. Maaskant
, B. Corbett
, P. J. Parbrook

University College Cork

Research output: Contribution to journal › Article › peer-review

Abstract

Heteroepitaxial growth of GaN buffer layers on 3C-SiC/(001) Si templates (4°-offcut towards [110]) by metalorganic vapour phase epitaxy has been investigated. High-temperature grown Al_0.5Ga_0.5N/AlN interlayers were employed to produce a single (2023) GaN surface orientation. Specular crack-free GaN layers showed undulations along [110] with a root mean square roughness of about 13.5 nm (50 × 50 μm²). The orientation relationship determined by x-ray diffraction (XRD) was found to be [1210]_GaN ∥[110] and [3034]_GaN ∥[110]_{3C - SiC/Si}. Low-temperature photoluminescence (PL) and XRD measurements showed the presence of basal-plane stacking faults in the layers. PL measurements of (2023) multiple-quantum-well and light-emitting diode structures showed uniform luminescence at about 500 nm emission wavelength. A small peak shift of about 3 nm was observed in the electroluminescence when the current was increased from 5 to 50 mA (25-250 A cm^-2).

Original language	English
Article number	125007
Journal	Semiconductor Science and Technology
Volume	30
Issue number	12
DOIs	https://doi.org/10.1088/0268-1242/30/12/125007
Publication status	Published - 30 Oct 2015

Keywords

MOVPE
nitrides
photoluminescence
semipolar
x-ray diffraction

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10.1088/0268-1242/30/12/125007

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title = "Semipolar (202¯3) nitrides grown on 3C-SiC/(001) Si substrates",

abstract = "Heteroepitaxial growth of GaN buffer layers on 3C-SiC/(001) Si templates (4°-offcut towards [110]) by metalorganic vapour phase epitaxy has been investigated. High-temperature grown Al0.5Ga0.5N/AlN interlayers were employed to produce a single (2023) GaN surface orientation. Specular crack-free GaN layers showed undulations along [110] with a root mean square roughness of about 13.5 nm (50 × 50 μm2). The orientation relationship determined by x-ray diffraction (XRD) was found to be [1210]GaN ∥[110] and [3034]GaN ∥[110]3C - SiC/Si. Low-temperature photoluminescence (PL) and XRD measurements showed the presence of basal-plane stacking faults in the layers. PL measurements of (2023) multiple-quantum-well and light-emitting diode structures showed uniform luminescence at about 500 nm emission wavelength. A small peak shift of about 3 nm was observed in the electroluminescence when the current was increased from 5 to 50 mA (25-250 A cm-2).",

keywords = "MOVPE, nitrides, photoluminescence, semipolar, x-ray diffraction",

author = "Dinh, \{Duc V.\} and S. Presa and M. Akhter and Maaskant, \{P. P.\} and B. Corbett and Parbrook, \{P. J.\}",

note = "Publisher Copyright: {\textcopyright} 2015 IOP Publishing Ltd.",

year = "2015",

month = oct,

day = "30",

doi = "10.1088/0268-1242/30/12/125007",

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T1 - Semipolar (202¯3) nitrides grown on 3C-SiC/(001) Si substrates

AU - Dinh, Duc V.

AU - Presa, S.

AU - Akhter, M.

AU - Maaskant, P. P.

AU - Corbett, B.

AU - Parbrook, P. J.

PY - 2015/10/30

Y1 - 2015/10/30

N2 - Heteroepitaxial growth of GaN buffer layers on 3C-SiC/(001) Si templates (4°-offcut towards [110]) by metalorganic vapour phase epitaxy has been investigated. High-temperature grown Al0.5Ga0.5N/AlN interlayers were employed to produce a single (2023) GaN surface orientation. Specular crack-free GaN layers showed undulations along [110] with a root mean square roughness of about 13.5 nm (50 × 50 μm2). The orientation relationship determined by x-ray diffraction (XRD) was found to be [1210]GaN ∥[110] and [3034]GaN ∥[110]3C - SiC/Si. Low-temperature photoluminescence (PL) and XRD measurements showed the presence of basal-plane stacking faults in the layers. PL measurements of (2023) multiple-quantum-well and light-emitting diode structures showed uniform luminescence at about 500 nm emission wavelength. A small peak shift of about 3 nm was observed in the electroluminescence when the current was increased from 5 to 50 mA (25-250 A cm-2).

AB - Heteroepitaxial growth of GaN buffer layers on 3C-SiC/(001) Si templates (4°-offcut towards [110]) by metalorganic vapour phase epitaxy has been investigated. High-temperature grown Al0.5Ga0.5N/AlN interlayers were employed to produce a single (2023) GaN surface orientation. Specular crack-free GaN layers showed undulations along [110] with a root mean square roughness of about 13.5 nm (50 × 50 μm2). The orientation relationship determined by x-ray diffraction (XRD) was found to be [1210]GaN ∥[110] and [3034]GaN ∥[110]3C - SiC/Si. Low-temperature photoluminescence (PL) and XRD measurements showed the presence of basal-plane stacking faults in the layers. PL measurements of (2023) multiple-quantum-well and light-emitting diode structures showed uniform luminescence at about 500 nm emission wavelength. A small peak shift of about 3 nm was observed in the electroluminescence when the current was increased from 5 to 50 mA (25-250 A cm-2).

KW - MOVPE

KW - nitrides

KW - photoluminescence

KW - semipolar

KW - x-ray diffraction

UR - https://www.scopus.com/pages/publications/84947748065

U2 - 10.1088/0268-1242/30/12/125007

DO - 10.1088/0268-1242/30/12/125007

M3 - Article

AN - SCOPUS:84947748065

SN - 0268-1242

VL - 30

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 12

M1 - 125007

ER -

Semipolar (202¯3) nitrides grown on 3C-SiC/(001) Si substrates

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