Sensitivity of high-k encapsulated MoS2 transistors to I-V measurement execution time

Pavel Bolshakov; Ava Khosravi; Peng Zhao; Robert M. Wallace; Chadwin D. Young; Paul K. Hurley

doi:10.1109/ICMTS.2018.8383789

Sensitivity of high-k encapsulated MoS₂ transistors to I-V measurement execution time

Pavel Bolshakov
, Ava Khosravi
, Peng Zhao
, Robert M. Wallace
, Chadwin D. Young
, Paul K. Hurley

University of Texas at Dallas

Research output: Chapter in Book/Report/Conference proceedings › Conference proceeding › peer-review

Abstract

High-k encapsulated M0S2 field-effect-transistors were fabricated and electrically characterized. Comparison between HfO₂ and AkO₃ encapsulated MoS₂ FETs and their I-V response to execution time are shown. Changes in gate voltage step and integration time demonstrate that electrical characterization parameters can significantly impact device parameters such as the subthreshold swing and the threshold voltage.

Original language	English
Title of host publication	ICMTS 2018 - Proceedings of the 2018 IEEE International Conference on Microelectronic Test Structures
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	161-165
Number of pages	5
ISBN (Electronic)	9781538650691
DOIs	https://doi.org/10.1109/ICMTS.2018.8383789
Publication status	Published - 12 Jun 2018
Event	2018 IEEE International Conference on Microelectronic Test Structures, ICMTS 2018 - Austin, United States Duration: 19 Mar 2018 → 22 Mar 2018

Publication series

Name	IEEE International Conference on Microelectronic Test Structures
Volume	2018-March

Conference

Conference	2018 IEEE International Conference on Microelectronic Test Structures, ICMTS 2018
Country/Territory	United States
City	Austin
Period	19/03/18 → 22/03/18

Access to Document

10.1109/ICMTS.2018.8383789

Cite this

Bolshakov, P., Khosravi, A., Zhao, P., Wallace, R. M., Young, C. D., & Hurley, P. K. (2018). Sensitivity of high-k encapsulated MoS₂ transistors to I-V measurement execution time. In ICMTS 2018 - Proceedings of the 2018 IEEE International Conference on Microelectronic Test Structures (pp. 161-165). (IEEE International Conference on Microelectronic Test Structures; Vol. 2018-March). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICMTS.2018.8383789

Bolshakov, Pavel ; Khosravi, Ava ; Zhao, Peng et al. / Sensitivity of high-k encapsulated MoS₂ transistors to I-V measurement execution time. ICMTS 2018 - Proceedings of the 2018 IEEE International Conference on Microelectronic Test Structures. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 161-165 (IEEE International Conference on Microelectronic Test Structures).

@inproceedings{ca685d4b085849f5a968a70505f50f02,

title = "Sensitivity of high-k encapsulated MoS2 transistors to I-V measurement execution time",

abstract = "High-k encapsulated M0S2 field-effect-transistors were fabricated and electrically characterized. Comparison between HfO2 and AkO3 encapsulated MoS2 FETs and their I-V response to execution time are shown. Changes in gate voltage step and integration time demonstrate that electrical characterization parameters can significantly impact device parameters such as the subthreshold swing and the threshold voltage.",

author = "Pavel Bolshakov and Ava Khosravi and Peng Zhao and Wallace, \{Robert M.\} and Young, \{Chadwin D.\} and Hurley, \{Paul K.\}",

note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 2018 IEEE International Conference on Microelectronic Test Structures, ICMTS 2018 ; Conference date: 19-03-2018 Through 22-03-2018",

year = "2018",

month = jun,

day = "12",

doi = "10.1109/ICMTS.2018.8383789",

language = "English",

series = "IEEE International Conference on Microelectronic Test Structures",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "161--165",

booktitle = "ICMTS 2018 - Proceedings of the 2018 IEEE International Conference on Microelectronic Test Structures",

address = "United States",

}

Bolshakov, P, Khosravi, A, Zhao, P, Wallace, RM, Young, CD & Hurley, PK 2018, Sensitivity of high-k encapsulated MoS₂ transistors to I-V measurement execution time. in ICMTS 2018 - Proceedings of the 2018 IEEE International Conference on Microelectronic Test Structures. IEEE International Conference on Microelectronic Test Structures, vol. 2018-March, Institute of Electrical and Electronics Engineers Inc., pp. 161-165, 2018 IEEE International Conference on Microelectronic Test Structures, ICMTS 2018, Austin, United States, 19/03/18. https://doi.org/10.1109/ICMTS.2018.8383789

Sensitivity of high-k encapsulated MoS₂ transistors to I-V measurement execution time. / Bolshakov, Pavel; Khosravi, Ava; Zhao, Peng et al.
ICMTS 2018 - Proceedings of the 2018 IEEE International Conference on Microelectronic Test Structures. Institute of Electrical and Electronics Engineers Inc., 2018. p. 161-165 (IEEE International Conference on Microelectronic Test Structures; Vol. 2018-March).

Research output: Chapter in Book/Report/Conference proceedings › Conference proceeding › peer-review

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AU - Hurley, Paul K.

PY - 2018/6/12

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N2 - High-k encapsulated M0S2 field-effect-transistors were fabricated and electrically characterized. Comparison between HfO2 and AkO3 encapsulated MoS2 FETs and their I-V response to execution time are shown. Changes in gate voltage step and integration time demonstrate that electrical characterization parameters can significantly impact device parameters such as the subthreshold swing and the threshold voltage.

AB - High-k encapsulated M0S2 field-effect-transistors were fabricated and electrically characterized. Comparison between HfO2 and AkO3 encapsulated MoS2 FETs and their I-V response to execution time are shown. Changes in gate voltage step and integration time demonstrate that electrical characterization parameters can significantly impact device parameters such as the subthreshold swing and the threshold voltage.

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Bolshakov P, Khosravi A, Zhao P, Wallace RM, Young CD, Hurley PK. Sensitivity of high-k encapsulated MoS₂ transistors to I-V measurement execution time. In ICMTS 2018 - Proceedings of the 2018 IEEE International Conference on Microelectronic Test Structures. Institute of Electrical and Electronics Engineers Inc. 2018. p. 161-165. (IEEE International Conference on Microelectronic Test Structures). doi: 10.1109/ICMTS.2018.8383789