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Si-based resonant cavity photodetector with a buried oxide reflector using a separation-by-implantation-of-oxygen substrate

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Abstract

We report on a novel Si-based resonant cavity photodetector with a buried oxide bottom reflector, by using a separation-byimplantation- oi-oxygen (SIMOX) substrate. The cavity shows very strong Fabry-Perot oscillations, with a peak responsivity of about 50 mAIW at 658 nm and 709 nm. Strong contrast between resonant and antiresonant conditions in the responsivity is observed.

Original languageEnglish
Title of host publicationESSDERC 1998 - Proceedings of the 28th European Solid-State Device Research Conference
EditorsA. Touboul, Y. Danto, H. Grunbacher
PublisherIEEE Computer Society
Pages196-199
Number of pages4
ISBN (Electronic)2863322346
Publication statusPublished - 1998
Externally publishedYes
Event28th European Solid-State Device Research Conference, ESSDERC 1998 - Bordeaux, France
Duration: 8 Sep 199810 Sep 1998

Publication series

NameEuropean Solid-State Device Research Conference
ISSN (Print)1930-8876

Conference

Conference28th European Solid-State Device Research Conference, ESSDERC 1998
Country/TerritoryFrance
CityBordeaux
Period8/09/9810/09/98

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