Silicon doping of semipolar (112¯2)Al_xGa_1−xN(0.50≤x≤0.55)

Material Science

• Silicon 100%
• Electrical Resistivity 100%
• Aluminum Nitride 100%
• Carrier Concentration 50%
• Luminescence 50%
• Photoluminescence 50%
• Surface Morphology 50%
• Vapor Phase Epitaxy 50%
• Carrier Mobility 50%
• Silane 50%
• Hall Effect 50%

Chemistry

• Silicon 100%
• Ambient Reaction Temperature 50%
• Photoluminescence 50%
• Metallorganic Chemical Vapor Deposition 50%
• Hall Effect Coefficient 50%
• Disilane 50%
• Cation 50%