Silicon Germanium quantum cascade heterostructures for infra-red emission

R. W. Kelsall; Z. Ikonic; P. Harrison; S. A. Lynch; P. Townsend; D. J. Paul; D. J. Norris; S. L. Liew; A. G. Cullis; X. Li; J. Zhang; M. Bain; H. S. Gamble

Silicon Germanium quantum cascade heterostructures for infra-red emission

R. W. Kelsall
, Z. Ikonic
, P. Harrison
, S. A. Lynch
, P. Townsend
, D. J. Paul
, D. J. Norris
, S. L. Liew
, A. G. Cullis
, X. Li
, J. Zhang
, M. Bain
, H. S. Gamble

Research output: Chapter in Book/Report/Conference proceedings › Chapter › peer-review

Abstract

The fabrication of quantum cascade (QC) laser from Group III-V (GaAs/ AlGaAs and InAlAs/InGaAs/InP) heterostructure for infra-red emision was analyzed. The emission wavelengths of QC lasers was varied over a remarkably wide range by adjustment of the thicknesses of individual heterostructure layers. The process leaves approximately 1-2μm of single crystal silicon wafer on top of the silicide which provided a high quality surface for epitaxial growth of the virtual substrate and heterostructure layers.

Original language	English
Title of host publication	2004 1st IEEE International Conference on Group IV Photonics
Pages	34-36
Number of pages	3
Publication status	Published - 2004
Externally published	Yes
Event	2004 1st IEEE International Conference on Group IV Photonics - Hong Kong, China, Hong Kong Duration: 29 Sep 2004 → 1 Oct 2004

Publication series

Name	2004 1st IEEE International Conference on Group IV Photonics

Conference

Conference	2004 1st IEEE International Conference on Group IV Photonics
Country/Territory	Hong Kong
City	Hong Kong, China
Period	29/09/04 → 1/10/04

Cite this

Kelsall, R. W., Ikonic, Z., Harrison, P., Lynch, S. A., Townsend, P., Paul, D. J., Norris, D. J., Liew, S. L., Cullis, A. G., Li, X., Zhang, J., Bain, M., & Gamble, H. S. (2004). Silicon Germanium quantum cascade heterostructures for infra-red emission. In 2004 1st IEEE International Conference on Group IV Photonics (pp. 34-36). Article WC2 (2004 1st IEEE International Conference on Group IV Photonics).

@inbook{d0043b70a00644ae8685db1fb1afa262,

title = "Silicon Germanium quantum cascade heterostructures for infra-red emission",

abstract = "The fabrication of quantum cascade (QC) laser from Group III-V (GaAs/ AlGaAs and InAlAs/InGaAs/InP) heterostructure for infra-red emision was analyzed. The emission wavelengths of QC lasers was varied over a remarkably wide range by adjustment of the thicknesses of individual heterostructure layers. The process leaves approximately 1-2μm of single crystal silicon wafer on top of the silicide which provided a high quality surface for epitaxial growth of the virtual substrate and heterostructure layers.",

author = "Kelsall, \{R. W.\} and Z. Ikonic and P. Harrison and Lynch, \{S. A.\} and P. Townsend and Paul, \{D. J.\} and Norris, \{D. J.\} and Liew, \{S. L.\} and Cullis, \{A. G.\} and X. Li and J. Zhang and M. Bain and Gamble, \{H. S.\}",

year = "2004",

language = "English",

isbn = "0780384741",

series = "2004 1st IEEE International Conference on Group IV Photonics",

pages = "34--36",

booktitle = "2004 1st IEEE International Conference on Group IV Photonics",

note = "2004 1st IEEE International Conference on Group IV Photonics ; Conference date: 29-09-2004 Through 01-10-2004",

}

Kelsall, RW, Ikonic, Z, Harrison, P, Lynch, SA, Townsend, P, Paul, DJ, Norris, DJ, Liew, SL, Cullis, AG, Li, X, Zhang, J, Bain, M & Gamble, HS 2004, Silicon Germanium quantum cascade heterostructures for infra-red emission. in 2004 1st IEEE International Conference on Group IV Photonics., WC2, 2004 1st IEEE International Conference on Group IV Photonics, pp. 34-36, 2004 1st IEEE International Conference on Group IV Photonics, Hong Kong, China, Hong Kong, 29/09/04.

TY - CHAP

T1 - Silicon Germanium quantum cascade heterostructures for infra-red emission

AU - Kelsall, R. W.

AU - Ikonic, Z.

AU - Harrison, P.

AU - Lynch, S. A.

AU - Townsend, P.

AU - Paul, D. J.

AU - Norris, D. J.

AU - Liew, S. L.

AU - Cullis, A. G.

AU - Li, X.

AU - Zhang, J.

AU - Bain, M.

AU - Gamble, H. S.

PY - 2004

Y1 - 2004

N2 - The fabrication of quantum cascade (QC) laser from Group III-V (GaAs/ AlGaAs and InAlAs/InGaAs/InP) heterostructure for infra-red emision was analyzed. The emission wavelengths of QC lasers was varied over a remarkably wide range by adjustment of the thicknesses of individual heterostructure layers. The process leaves approximately 1-2μm of single crystal silicon wafer on top of the silicide which provided a high quality surface for epitaxial growth of the virtual substrate and heterostructure layers.

AB - The fabrication of quantum cascade (QC) laser from Group III-V (GaAs/ AlGaAs and InAlAs/InGaAs/InP) heterostructure for infra-red emision was analyzed. The emission wavelengths of QC lasers was varied over a remarkably wide range by adjustment of the thicknesses of individual heterostructure layers. The process leaves approximately 1-2μm of single crystal silicon wafer on top of the silicide which provided a high quality surface for epitaxial growth of the virtual substrate and heterostructure layers.

UR - https://www.scopus.com/pages/publications/21044447533

M3 - Chapter

AN - SCOPUS:21044447533

SN - 0780384741

SN - 9780780384743

T3 - 2004 1st IEEE International Conference on Group IV Photonics

SP - 34

EP - 36

BT - 2004 1st IEEE International Conference on Group IV Photonics

T2 - 2004 1st IEEE International Conference on Group IV Photonics

Y2 - 29 September 2004 through 1 October 2004

ER -

Silicon Germanium quantum cascade heterostructures for infra-red emission

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