Silicon Photonic Segmented Modulator-Based Electro-Optic DAC for 100 Gb/s PAM-4 Generation

David Patel; Alireza Samani; Venkat Veerasubramanian; Samir Ghosh; David V. Plant

doi:10.1109/LPT.2015.2466654

Silicon Photonic Segmented Modulator-Based Electro-Optic DAC for 100 Gb/s PAM-4 Generation

David Patel
, Alireza Samani
, Venkat Veerasubramanian
, Samir Ghosh
, David V. Plant

McGill University

Research output: Contribution to journal › Article › peer-review

Abstract

We report on the design and characterization of a silicon-on-insulator traveling-wave multi-electrode Mach-Zehnder modulator (MZM). The 2-bit electro-optic (EO) digital-to-analog converter is formed by dividing a series push-pull MZM into two segments, one for each bit. The EO bandwidth of the longer segment of the MZM is measured to be 48 GHz at 0 V reverse bias. We operate the device at speeds up to 50 GBd to create a four-level pulse amplitude modulation signal, and thus generating 100 Gb/s on a single wavelength without signal processing at the transmitter or the receiver. The pre-forward error correction (FEC) bit error rate is estimated to be lower than the hard-decision FEC threshold of 3.8 × 10^-3 over 1 km of standard single-mode fiber, and thus leading to error-free transmission at 100 Gb/s.

Original language	English
Article number	7185365
Pages (from-to)	2433-2436
Number of pages	4
Journal	IEEE Photonics Technology Letters
Volume	27
Issue number	23
DOIs	https://doi.org/10.1109/LPT.2015.2466654
Publication status	Published - 1 Dec 2015
Externally published	Yes

Keywords

Electrooptic modulators
integrated optics
intensity modulation
interferometers
optical interconnections
silicon photonics

Access to Document

10.1109/LPT.2015.2466654

Cite this

@article{a7c2391675ee49d793a4c6554e9c0e4d,

title = "Silicon Photonic Segmented Modulator-Based Electro-Optic DAC for 100 Gb/s PAM-4 Generation",

abstract = "We report on the design and characterization of a silicon-on-insulator traveling-wave multi-electrode Mach-Zehnder modulator (MZM). The 2-bit electro-optic (EO) digital-to-analog converter is formed by dividing a series push-pull MZM into two segments, one for each bit. The EO bandwidth of the longer segment of the MZM is measured to be 48 GHz at 0 V reverse bias. We operate the device at speeds up to 50 GBd to create a four-level pulse amplitude modulation signal, and thus generating 100 Gb/s on a single wavelength without signal processing at the transmitter or the receiver. The pre-forward error correction (FEC) bit error rate is estimated to be lower than the hard-decision FEC threshold of 3.8 × 10-3 over 1 km of standard single-mode fiber, and thus leading to error-free transmission at 100 Gb/s.",

keywords = "Electrooptic modulators, integrated optics, intensity modulation, interferometers, optical interconnections, silicon photonics",

author = "David Patel and Alireza Samani and Venkat Veerasubramanian and Samir Ghosh and Plant, \{David V.\}",

note = "Publisher Copyright: {\textcopyright} 2015 IEEE.",

year = "2015",

month = dec,

day = "1",

doi = "10.1109/LPT.2015.2466654",

language = "English",

volume = "27",

pages = "2433--2436",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "23",

}

TY - JOUR

T1 - Silicon Photonic Segmented Modulator-Based Electro-Optic DAC for 100 Gb/s PAM-4 Generation

AU - Patel, David

AU - Samani, Alireza

AU - Veerasubramanian, Venkat

AU - Ghosh, Samir

AU - Plant, David V.

PY - 2015/12/1

Y1 - 2015/12/1

N2 - We report on the design and characterization of a silicon-on-insulator traveling-wave multi-electrode Mach-Zehnder modulator (MZM). The 2-bit electro-optic (EO) digital-to-analog converter is formed by dividing a series push-pull MZM into two segments, one for each bit. The EO bandwidth of the longer segment of the MZM is measured to be 48 GHz at 0 V reverse bias. We operate the device at speeds up to 50 GBd to create a four-level pulse amplitude modulation signal, and thus generating 100 Gb/s on a single wavelength without signal processing at the transmitter or the receiver. The pre-forward error correction (FEC) bit error rate is estimated to be lower than the hard-decision FEC threshold of 3.8 × 10-3 over 1 km of standard single-mode fiber, and thus leading to error-free transmission at 100 Gb/s.

AB - We report on the design and characterization of a silicon-on-insulator traveling-wave multi-electrode Mach-Zehnder modulator (MZM). The 2-bit electro-optic (EO) digital-to-analog converter is formed by dividing a series push-pull MZM into two segments, one for each bit. The EO bandwidth of the longer segment of the MZM is measured to be 48 GHz at 0 V reverse bias. We operate the device at speeds up to 50 GBd to create a four-level pulse amplitude modulation signal, and thus generating 100 Gb/s on a single wavelength without signal processing at the transmitter or the receiver. The pre-forward error correction (FEC) bit error rate is estimated to be lower than the hard-decision FEC threshold of 3.8 × 10-3 over 1 km of standard single-mode fiber, and thus leading to error-free transmission at 100 Gb/s.

KW - Electrooptic modulators

KW - integrated optics

KW - intensity modulation

KW - interferometers

KW - optical interconnections

KW - silicon photonics

UR - https://www.scopus.com/pages/publications/84944034032

U2 - 10.1109/LPT.2015.2466654

DO - 10.1109/LPT.2015.2466654

M3 - Article

AN - SCOPUS:84944034032

SN - 1041-1135

VL - 27

SP - 2433

EP - 2436

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 23

M1 - 7185365

ER -

Silicon Photonic Segmented Modulator-Based Electro-Optic DAC for 100 Gb/s PAM-4 Generation

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this